Preview

Doklady BGUIR

Advanced search
Fullscreen

For citations:


Nguyen T.T., Ha D.D., Lovshenko I.Yu., Stempitsky V.R. Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement. Doklady BGUIR. 2024;22(6):81-89. (In Russ.) https://doi.org/10.35596/1729-7648-2024-22-6-81-89

Views: 30


Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.


ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)