bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2024-22-6-81-89bsuir-4026Research ArticleСтатьиКонструктивные решения приборных структур биполярных транзисторов с изолированным затвором и вертикальным расположением каналаDesign Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel ArrangementНгуенЧонг ТханьNguyenTrong Thanh

Чонг Тхань Нгуен, асп. каф. микро- и наноэлектроники

г. Минск

Trong Thanh Nguyen, Postgraduate at the Department of Micro- and Nanoelectronics

Minsk

ХаДао ДиньHaDao Dinh

Дао Динь Ха, канд. тех. наук, преп. каф. микропроцессорной техники

г. Ханой

Dao Dinh Ha, Саnd. of Sci., Lecturer at the Department of Microprocessor Engineering

Hanoi

ЛовшенкоИ. Ю.LovshenkoI. Yu.

Ловшенко Иван Юрьевич, зав. науч.-исслед. лаб. «Компьютерное проектирование микро- и наноэлектронных систем» (НИЛ 4.4)

220013, г. Минск, ул. П. Бровки, 6

Тел.: +375 17 293-88-90

Lovshenko Ivan Yur’evich, Head of the R&D Lab. “Computer-Aided Design of Micro- and Nanoelectronic Systems” (Lab 4.4)

220013, Minsk, P. Brovki St., 6

Тел.: +375 17 293-88-90

 

lovshenko@bsuir.byСтемпицкийВ. Р.StempitskyV. R.

Стемпицкий В. Р., канд. тех. наук, доц., проректор по научной работе, науч. рук. НИЛ 4.4

г. Минск

Stempitsky V. R., Саnd. of Sci., Associate Professor, Vice-Rector for Academic Affairs, Adviser of the Research Lab 4.4

Minsk

Белорусский государственный университет информатики и радиоэлектроникиBelarusian State University of Informatics and RadioelectronicsВьетнамский государственный технический университет имени Ле Куй ДонаLe Quy Don University of Science and Technology2024281220242268189Copyright © Нгуен Ч.Т., Ха Д.Д., Ловшенко И.Ю., Стемпицкий В.Р., 20242024Нгуен Ч.Т., Ха Д.Д., Ловшенко И.Ю., Стемпицкий В.Р.Nguyen T.T., Ha D.D., Lovshenko I.Y., Stempitsky V.R.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/4026

Представлены результаты компьютерного моделирования эксплуатационных характеристик приборных структур биполярного транзистора с изолированным затвором (англ. IGBT) и вертикальным расположением канала, сформированных в соответствии с технологиями Trench-IGBT, суперпереходной Trench-IGBT (SJ-IGBT), SJ-IGBT с глубокой канавкой (DT-SJ-IGBT), SJ-IGBT с плавающей p-областью (FP-SJ-IGBT) и Trench-IGBT со ступенчатым легированным коллектором. Рассмотрены особенности функционирования конструктивных решений такого биполярного транзистора. Исследована конструкция Trench-IGBT со ступенчатым легированным коллектором, которая обеспечивает уменьшение потерь при выключении.

This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench-IGBT (SJ-IGBT), Deep Trench SJ-IGBT (DT-SJ-IGBT), Floating p-region SJ-IGBT (FP-SJ-IGBT), and Step-Doped Collector Trench-IGBT. The operating principles of these insulated gate bipolar transistor design solutions are discussed. A particular focus is placed on the Step-Doped Collector Trench-IGBT structure, which demonstrates reduced switching losses.

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The authors declare that there are no conflicts of interest present.