Development of an efficient light signal source is a basic necessity for the development of silicon photonics. Avalanche silicon light emitting diodes (LEDs) can serve as such a source. The article discusses avalanche LEDs based on nanostructured silicon. Measurement of the capacitance of LED structures has shown that when the LED area is reduced to 100 μm2, the total capacitance of the LED and metal wiring is reduced to hundreds of femtofarads, which ensures the functioning of avalanche LEDs in the microwave range. It is shown that the increase in the speed of avalanche LEDs is limited by resistive-capacitive delays, depending on the barrier capacitance of the diode structures. Methods for increasing the speed of avalanche LEDs in both the ultra-high frequency range and the hyper-high frequency range are considered. In particular, by reducing the working area of LEDs to 1 µm2, they are predicted to function over the entire gigahertz frequency range.
A comparison of the dielectric characteristics (relative permittivity, dielectric loss tangent, band gap, leakage current and breakdown voltage) of hafnium and hafnium-zirconium oxide films was carried out. It is shown that pulsed reactive magnetron sputtering of a Hf target in an Ar/O2 working gas environment can be used to obtain HfOx films with a relative permittivity of e = 12.5–16.0 and e = 12.0–14.0 at frequencies of F = 1 kHz and F = 1 MHz, respectively, with a dielectric loss tangent of tga = 0.012–0.022 (F = 1 kHz) and tga = 0.053–0.062 (F = 1 MHz), a leakage current density of JL = (1.0–3.0) × 10–3 A/m2 at an electric field strength of E = 5 × 107 V/m, with a band gap of Eg = 5.85–5.87 eV and a breakdown field strength of Ebr = (2.1–2.4) × 108 V/m. Doping of hafnium oxide with zirconium (40 at.%) made it possible to reduce the dielectric loss tangent to 0.008–0.012 (F = 1 kHz) and to 0.04–0.05 (F = 1 MHz), the leakage current density to (3–5) × 10–5 A/m2, and increase the breakdown voltage to (2.5–3.0) × 108 V/m. At the same time, a slight increase in the relative permittivity of the films to 14–16 was observed at frequencies of 1 kHz and 1 MHz due to a decrease in frequency dispersion from 1.15 to values less than 1.10 and an increase in Eg to 5.86–5.89 eV.
Formation of silicon-germanium alloy films by electrochemically filling a porous silicon matrix with germanium and subjecting it to rapid thermal processing at 950 °C in argon flow is investigated. Low-porosity porous silicon layers are obtained using metal-assisted chemical etching of lightly-doped silicon wafers. It is shown that the alloy film formed in the employed temperature regime is always located on a residual porous underlayer. The difference in the thickness of the initial porous silicon layer determines not only the thickness of this underlayer, but also that of the alloy film itself, as well as its elemental composition. This behavior is attributed to the difference in the distribution of the temperature gradient, as heat transfer from the subsurface region is greatly complicated due to reduced thermal conductivity of thicker porous layers, causing it to be subjected to higher temperatures and leading to the growth of a thicker alloy layer with increased silicon contents. Assumingly, the presence of a porous underlayer can thermally and electrically insulate the alloy film from the monocrystalline wafer, eliminating the need to transfer the film to a dielectric substrate for subsequent use in thermoelectric converters and other electronic devices.
Graphene, a representative of a new generation of 2D materials, remains in the center of scientific research as a reflection of its unique electrical and mechanical properties. The article presents the results of a study of electron scattering procedures of optical and acoustic phonons in graphene modified with hydrogen atoms, a C2H2 structure known as graphane. The obtained dependences of the scattering rates take into account the combined processes of phonon emission and absorption by electrons, but the interaction of phonons with the substrate material is not considered. The scattering rates play an important role in a detailed study of the dynamics of charge carrier transport in semiconductor structures containing heterogeneous layers. Their use makes it possible to implement the well-known many-particle Monte Carlo method, widely used in modeling complex semiconductor devices. The obtained results will allow us to study new heterostructured devices based on graphene and its modifications with improved output characteristics in high-frequency operating ranges.
The influence of random vibration effects on the phase noise of quartz generators is examined. To reduce this noise, it is proposed to use a VI 0.8/0 cable vibration isolator. Experimental studies were conducted to evaluate the efficiency of vibration isolators along the X, Y, and Z axes. The results demonstrate a decrease in phase noise under various vibration modes. The results of the analysis of the effect of the spectral density of vibrations and resonant frequencies are presented, confirming the improvement of the frequency stability of quartz oscillators when using cable vibration isolators. As a result of measurements, it was found that the use of cable vibration isolators allows for a 15–30 % decrease in phase noise depending on the frequency range and direction of random vibration. Vibration isolators are most effective in the frequency range above 150 Hz for the X and Z axes, and above 300 Hz for the Y axis. The data obtained confirm that vibration isolators can significantly improve the stability of quartz oscillators under vibration conditions, starting from a certain frequency of action.
This paper presents the results of analyzing the change in the nonlinear impedance of plasma in a dielectric barrier discharge. The volt-ampere characteristics of the plasma were obtained experimentally. The dependencies of their changes on the amplitude of the excitation voltage in the generator’s output circuit, the flow rate of the inert gas, and the distance between the electrodes of the discharge system were determined.
By using the technology of double-frequency testing, an experimental analysis of nonlinear properties of low-power radio-frequency mixers is performed at frequencies of the n7 band allocated in Belarus for 4G mobile communication systems and the n78 band that is planned to be used in Belarus for 5G mobile communications. Based on the results of the measurements of mixer characteristics (the double-frequency characteristics, single-tone amplitude characteristics, as well as two-tone amplitude characteristics and dynamic ranges for 3rd-, 5th-, 7th-, and 9th-order intermodulation) in the harmonic zone of the useful signal, high-order polynomial models describing the transfer characteristics of the considered mixers are synthesized. These models are intended to analyze the effect of radio-frequency electromagnetic interference on radio links behavior in case of a large dynamic range of input signals by using the discrete nonlinear modeling technique. The obtained models provide high adequacy and computational efficiency of quantitative analysis of nonlinear processes and radio interference occurring in receivers of 4G/5G/6G radio networks in a complex electromagnetic environment.
The article considers the application of a two-diode physical and mathematical model in the analysis of telemetry data of solar panels using digital twins to monitor the efficiency of solar power plants. This approach made it possible to replace the temporary data of each solar panel’s operation during a month with data from seven output electrophysical parameters. This simplified data processing: one solar panel – one set of parameters per month. Analysis of telemetry data using digital twins allows using them to calculate normalized values of the output electric power at the point of maximum electricity generation for all solar panels and, based on the results, to find anomalies in their operation. Using the example of a solar power plant consisting of 272 panels, the possibility of effectively identifying abnormally operating solar panels is shown.
The paper presents the concept and modeling results of a multisensor system designed to prevent thermal runaway in lithium-ion batteries. This is especially true for LCO, NMC and NCO batteries. The system integrates three types of sensors: a capacitive pressure sensor, a gas sensor based on a metal oxide semiconductor, and a platinum temperature sensor. Moreover, all sensors are located on a single chip, which ensures increased reliability and safety, minimizing the risks of fire, explosion, or damage to batteries. Three battery operating modes are proposed: normal, hazardous, and critical. In the normal mode, the temperature and gas concentration remain at safe levels, while in the hazardous mode, they begin to increase, indicating the possible onset of destructive reactions. In the critical mode, the battery reaches hazardous levels, which can lead to damage, fire, or explosion. The multisensor system was modeled using the COMSOL Multiphysics 6.1 package using the finite element method. This approach helps to improve the safety of lithium-ion batteries by solving the problems of monitoring their condition. The scalability of the system makes it suitable for applications in both portable electronics and electric vehicles.
The paper presents the results of research on laser processing of natural and artificial diamond crystals in microelectronics technologies by thermal laser separation. An analysis of physical-chemical phenomena observed as a result of the thermal effect of laser radiation on anisotropic materials in various crystallographic directions is conducted. Based on the Griffiths criterion, the mechanics of brittle fracture as a result of the formation of critical micromechanical stresses caused by the thermal action of laser radiation are analyzed. The non-stationary problem of thermal conductivity was solved, temperature distributions in the volume of the material were calculated, on the basis of which information on the change of elastic properties of crystals leading to its controlled destruction in given directions was obtained. The simulation results were confirmed experimentally in the processes of thermal laser separation of rough diamonds by forming localized areas of critical thermoelastic microstresses at a given depth in the crystal volume, which are the starting point of the line of controlled crystal separation. Optimal modes of controlled separation of crystals of natural and artificial diamonds using a diode-pumped laser with a radiation wavelength of 1064 nm have been identified.
A method for constructing a group of generating feasible subsets in the knapsack problem under the condition that the non-dominance depth of a given Pareto layer is greater than zero is developed. The method is based on a multicriterial mathematical model for solving the knapsack problem with two quality criteria and partitioning the initial data set of the knapsack problem into separate Pareto layers. Various methods for constructing generating feasible subsets are proposed depending on the relationship between the coordinates of the elements of the given Pareto layers and the knapsack volume. The structure of the Pareto layers, which are a non-dominance group of a given individual Pareto layer, is determined. It is shown that there is a Pareto layer, starting from which it is not necessary to consider the elements of this layer and all subsequent ones when constructing feasible subsets. This follows from the ordering of the elements of the initial data set of the knapsack problem according to the priority of their inclusion in the feasible subsets.
The article considers the issues of testing computing systems and their components. A class of controlled probabilistic tests with a small number of tests patterns is identified and studied. A method for constructing controlled probabilistic tests with a given Hamming distance is presented, the basis of which is one-dimensional scaling of templates representing tests of small bit depth. It is proposed to use exhaustive and pseudo-exhaustive tests as templates for obtaining controlled probabilistic tests. The properties of the generated tests and approaches to their use as an alternative to probabilistic tests are studied. The efficiency of the method for constructing controlled probabilistic tests is experimentally analyzed and confirmed for the case of testing memory devices for the presence of complex code-sensitive faults.
A hardware implementation based on Field Programmable Gate Array (FPGA) of a single-layer feedforward neural network for handwritten digit recognition has been developed. The effect of the network coefficient bit depth on the recognition accuracy and FPGA hardware costs has been studied. The neural network was trained using the MNIST handwritten digit database. The neural network prototype was implemented as an IP core on the ZYBO Z7 debug board. The developed prototype was used to perform experiments with different bit depths of neural network coefficient representation. Graphs of recognition accuracy and the amount of FPGA hardware resources depending on the bit depth of neural network coefficient representation have been constructed. The coefficients obtained as a result of neural network training have been analyzed using decomposition into bit planes. It has been shown that 5 bits are sufficient to represent neural network coefficients, since they contain the main information learned by the network, ensuring economical use of FPGA resources and high recognition accuracy (92.4 %).
The article substantiates the feasibility of implementing an electronic digital signature system based on a virtual infrastructure in the general secondary education system as a means of digital transformation of this system and increasing the efficiency of educational processes. The article presents the results of the analysis of processes in the general secondary education system, during the implementation of which documents are signed. The article describes the technologies that make fault-tolerant and secure operation of such a system possible. A scheme for integrating an electronic digital signature system based on a virtual infrastructure into the information system of a general secondary education institution has been developed. The article identifies problematic issues that need to be resolved during the implementation and use of the scheme in the general secondary education system.
ISSN 2708-0382 (Online)