ANALYTICAL SOLUTION OF EQUATIONS SET DESCRIBING DIFFUSION OF POINT DEFECTS IN THE 2-LAYER SEMICONDUCTOR STRUCTURE
Abstract
The boundary-value problem on impurity and point defect diffusion in the 2-layer semiconductor structure was formulated and analyzed. The analytical solution of the set of equations describing diffusion of intrinsic point defects was obtained for the case of the constant coefficients of these equations. Calculation of the typical distribution of point defects in the 2-layer structure was carried out.
About the Authors
O. I. Velichko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
V. V. Aksenov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
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Review
For citations:
Velichko O.I., Aksenov V.V. ANALYTICAL SOLUTION OF EQUATIONS SET DESCRIBING DIFFUSION OF POINT DEFECTS IN THE 2-LAYER SEMICONDUCTOR STRUCTURE. Doklady BGUIR. 2017;(7):20-24. (In Russ.)
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