Electrical model of the 90 nm MOSFET
Abstract
The technique of extraction and identification of electrical models parameters for nanoscale semiconductor devices based on optimization methods application is developed. The proposed approach efficiency to identification, extraction and optimization of parameters of semiconductor devices electrical models is demonstrated by examples of BSIM4 and HiSIM2 models SPICE parameters extraction for standard design MOS transistors manufactured using the technology providing minimum channel length of 90 nm.
About the Authors
A. M. Borovik
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
V. T. Khanko
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
V. R. Stempitsky
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
References
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Review
For citations:
Borovik A.M., Khanko V.T., Stempitsky V.R. Electrical model of the 90 nm MOSFET. Doklady BGUIR. 2017;(3):65-69. (In Russ.)
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