The Influence of Cleaning Parameters in High-Density Argon Plasma on the Morphology and Surface Properties of Monocrystalline Silicon Substrates
https://doi.org/10.35596/1729-7648-2026-24-3-44-51
Abstract
The influence of high-density inductively coupled argon plasma parameters on the morphology and surface characteristics of single-crystal silicon substrates was studied. Samples were treated with high-frequency source powers ranging from 100 to 1000 W, with cleaning times of up to 300 s. Surface morphology was analyzed using atomic force microscopy, followed by a study of the contact angle and adhesion work. The effect of high-density plasma cleaning on surface energy was noted. It was found that effective cleaning parameters for achieving minimal roughness and removing contaminants without damaging the surface include a discharge power of 300–500 W and an exposure time of 60–120 s. The obtained data can be used to select plasma cleaning modes for single-crystal silicon substrates in microelectronics processes.
Keywords
surface cleaning,
high-density inductively coupled plasma,
surface morphology,
atomic force microscopy,
monocrystalline silicon
Supporting agencies: The authors express gratitude to D. A. Kotov and D. B. Migas for valuable recommendations and comments during the work on the article, as well as to V. A. Lapitskaya and O. M. Chernausik for conducting research using atomic force microscopy.
About the Authors
K. Logunov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Logunov Konstantin, Postgraduate of Micro- and Nanoelectronics Department, Deputy Dean of the Faculty of Radio Engineering and Electronics
220013, Minsk, P. Brovki St., 6
Теl.: +375 17 293-89-91
A. Mikholap
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Mikholap А., Student, Belarusian State University of Informatics and Radioelectronics
Minsk
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Review
For citations:
Logunov K., Mikholap A. The Influence of Cleaning Parameters in High-Density Argon Plasma on the Morphology and Surface Properties of Monocrystalline Silicon Substrates. Doklady BGUIR. 2026;24(3):44-51. (In Russ.) https://doi.org/10.35596/1729-7648-2026-24-3-44-51
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