bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2026-24-3-44-51bsuir-4374Research ArticleСтатьиВлияние режимов очистки в высокоплотной плазме аргона на морфологию и свойства поверхности подложек монокристаллического кремнияThe Influence of Cleaning Parameters in High-Density Argon Plasma on the Morphology and Surface Properties of Monocrystalline Silicon SubstratesЛогуновК. Т.LogunovK.

Логунов Константин Тимофеевич, асп. каф. микро- и наноэлектроники, зам. декана факультета радиотехники и электроники

220013, Минск, ул. П. Бровки, 6

Тел.: +375 17 293-89-91

Logunov Konstantin, Postgraduate of Micro- and Nanoelectronics Department, Deputy Dean of the Faculty of Radio Engineering and Electronics

220013, Minsk, P. Brovki St., 6

Теl.: +375 17 293-89-91

k.logunov@bsuir.byМихолапА. А.MikholapA.

Михолап А. А., студент

Минск

Mikholap А., Student, Belarusian State University of Informatics and Radioelectronics

Minsk

Белорусский государственный университет информатики и радиоэлектроникиBelarusian State University of Informatics and Radioelectronics2026290620262434451Copyright © Логунов К.Т., Михолап А.А., 20262026Логунов К.Т., Михолап А.А.Logunov K., Mikholap A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/4374

Исследовано влияние параметров высокоплотной индуктивно-связанной плазмы аргона на морфологию и характеристики поверхности подложек монокристаллического кремния. Обработка образцов проводилась в диапазоне мощностей высокочастотного источника от 100 до 1000 Вт при длительности очистки до 300 с. Морфология поверхности анализировалась методом атомно-силовой микроскопии с последующим исследованием краевого угла смачивания и работы адгезии. Отмечено влияние очистки в высокоплотной плазме на поверхностную энергию. Установлено, что эффективные параметры очистки для получения минимальной шероховатости и удаления загрязнений без повреждения поверхности – это мощность разряда 300–500 Вт и длительность воздействия 60–120 с. Полученные данные могут быть использованы при подборе режимов плазменной очистки подложек монокристаллического кремния в технологических процессах микроэлектроники.

The influence of high-density inductively coupled argon plasma parameters on the morphology and surface characteristics of single-crystal silicon substrates was studied. Samples were treated with high-frequency source powers ranging from 100 to 1000 W, with cleaning times of up to 300 s. Surface morphology was analyzed using atomic force microscopy, followed by a study of the contact angle and adhesion work. The effect of high-density plasma cleaning on surface energy was noted. It was found that effective cleaning parameters for achieving minimal roughness and removing contaminants without damaging the surface include a discharge power of 300–500 W and an exposure time of 60–120 s. The obtained data can be used to select plasma cleaning modes for single-crystal silicon substrates in microelectronics processes.

очистка поверхностивысокоплотная индуктивно-связанная плазмаморфология поверхностиатомно-силовая микроскопиямонокристаллический кремнийsurface cleaninghigh-density inductively coupled plasmasurface morphologyatomic force microscopymonocrystalline siliconАвторы выражают благодарность Д. А. Котову и Д. Б. Мигасу за ценные рекомендации и замечания в процессе работы над статьей, а также В. А. Лапицкой и О. М. Чернаусик за проведение исследований методом атомно-силовой микроскопии.The authors express gratitude to D. A. Kotov and D. B. Migas for valuable recommendations and comments during the work on the article, as well as to V. A. Lapitskaya and O. M. Chernausik for conducting research using atomic force microscopy.ReferencesA Review of Silicon-Based Wafer Bonding Processes, an Approach to Realize the Monolithic Integration of Si-CMOS and III–V-on-Si Wafers / S. Y. Bao [et al.] // Journal of Semiconductors. 2021. Vol. 42, Iss. 2. P. 023–106. http://doi.org/10.1088/1674-4926/42/2/023106.Bao S. Y., Wang Y., Lina K., Zhang L., Wang B., Sasangka W. A., et al. (2021) A Review of Silicon-Based Wafer Bonding Processes, an Approach to Realize the Monolithic Integration of Si-CMOS and III–V-on-Si Wafers. Journal of Semiconductors. 42 (2), 023–106. https://doi.org/10.1088/1674-4926/42/2/023106.Koichiro, S. Influence of Silicon-Wafer Loading Ambients in an Oxidation Furnace on the Gate Oxide Degradation Due to Organic Contamination / S. Koichiro, H. Takeshi // Applied Physics Letters. 1997. Vol. 71, No 25. P. 3670–3672.Koichiro S., Takeshi H. (1997) Influence of Silicon-Wafer Loading Ambients in an Oxidation Furnace on the Gate Oxide Degradation Due to Organic Contamination. Applied Physics Letters. 71 (25), 3670–3672.Removal Efficiency of Organic Contaminants on Si Wafer Surfaces by the N2O ECR Plasma Technique / D. K. Kim [et al.] // Materials Chemistry and Physics. 2005. Vol. 91, Iss. 2. P. 490–493.Kim D. K., Park Y. K., Biswas S., Lee C. (2005) Removal Efficiency of Organic Contaminants on Si Wafer Surfaces by the N2O ECR Plasma Technique. Materials Chemistry and Physics. 91 (2), 490–493.Hattori, Т. Chemical Contamination Control in ULSI Wafer Processing / T. Hattori // AIP Conference Proceedings. 2001. Vol. 550. P. 275–284. https://doi.org/10.1063/1.1354411.Hattori T. (2001) Chemical Contamination Control in ULSI Wafer Processing. AIP Conference Proceedings. 550, 275–284. https://doi.org/10.1063/1.1354411.Bera, В. Silicon Wafer Cleaning: A Fundamental and Critical Step in Semiconductor Fabrication Process / B. Bera // International Journal of Applied Nanotechnology. 2019. Vol. 5, Iss. 1. P. 8–13.Bera B. (2019) Silicon Wafer Cleaning: A Fundamental and Critical Step in Semiconductor Fabrication Process. International Journal of Applied Nanotechnology. 5 (1), 8–13.Sammut, S. A. Comprehensive Review of Plasma Cleaning Processes Used in Semiconductor Packaging / S. A. Sammut // Applied Sciences. 2025. Vol. 15, No 13. https://doi.org/10.3390/app15137361.Sammut S. A. (2025) Comprehensive Review of Plasma Cleaning Processes Used in Semiconductor Packaging. Applied Sciences. 15 (13). https://doi.org/10.3390/app15137361.Cheng, Y. L. Plasma Damage on Low-k Dielectric Materials / Y. L. Cheng, C. Y. Lee, C. W. Haung // Plasma Science and Technology. 2018. https://doi.org/10.5772/INTECHOPEN.79494.Cheng Y. L., Lee C. Y., Haung C. W. (2019) Plasma Damage on Low-k Dielectric Materials. Plasma Science and Technology. https://doi.org/10.5772/INTECHOPEN.79494.Argon Plasma Improves the Tissue Integration and Angiogenesis of Subcutaneous Implants by Modifying Surface Chemistry and Topography / M. Griffin [et al.] // International Journal of Nanomedicine. 2019. Vol. 14. P. 1993–1994. https://doi.org/10.2147/IJN.S206850.Griffin M., Palgrave R., Baldovino-Medrano V. G., Butler P. E., Kalaskar D. M. (2019) Argon Plasma Improves the Tissue Integration and Angiogenesis of Subcutaneous Implants by Modifying Surface Chemistry and Topography. International Journal of Nanomedicine. 14, 1993–1994. https://doi.org/10.2147/IJN.S206850.ICP Polishing of Silicon for High-Quality Optical Resonators on a Chip / A. Laliotis [et al.] // Journal of Micromechanics and Microengineering. 2012. Vol. 22, No 12. https://doi.org/10.1088/0960-1317/22/12/125011.Laliotis A., Trupke M., Cotter J. P., Lewis G., Kraft M., Hinds E. A. (2012) ICP Polishing of Silicon for High-Quality Optical Resonators on a Chip. Journal of Micromechanics and Microengineering. 22 (12). https://doi. org/10.1088/0960-1317/ 22/12/125011.Karbowiak, T. Importance of Surface Tension Characterization for Food, Pharmaceutical and Packaging Products: A Review / T. Karbowiak, F. Debeaufort, A. Voilley // Critical Reviews in Food Science and Nutrition References. 2006. Vol. 46, No 5. P. 391–407.Karbowiak T., Debeaufort F., Voilley A. (2006) Importance of Surface Tension Characterization for Food, Pharmaceutical and Packaging Products: A Review. Critical Reviews in Food Science and Nutrition References. 46 (5), 391–407.Hess, D. W. Plasma Stripping, Cleaning, and Surface Conditioning. Handbook of Silicon Wafer Cleaning Technology. 3rd ed. / D. W. Hess, A. K. Reinhardt // William Andrew Publishing. 2018. P. 379–455.Hess D. W., Reinhardt A. K. (2018) Plasma Stripping, Cleaning, and Surface Conditioning. Handbook of Silicon Wafer Cleaning Technology. 3rd ed. William Andrew Publishing. 379–455.Two Modes of Surface Roughening During Plasma Etching of Silicon: Role of Ionized Etch Products / N. Nobuya [et al.] // Journal of Applied Physics. 2014. Vol. 116. P. 223–302.Nobuya N., Hirotaka T., Yoshinori T., Koji E., Kouich O. (2014) Two Modes of Surface Roughening During Plasma Etching of Silicon: Role of Ionized Etch Products. Journal of Applied Physics. 116, 223–302.Alam, А. U. The Effects of Oxygen Plasma and Humidity on Surface Roughness, Water Contact Angle and Hardness of Silicon, Silicon Dioxide and Glass / A. U. Alam, M. Howlader, M. J. Deen // Journal of Micromechanics and Microengineering. 2014. Vol. 24, No 3. P. 10–35.Alam A. U., Howlader M., Deen M. J. (2014) The Effects of Oxygen Plasma and Humidity on Surface Roughness, Water Contact Angle and Hardness of Silicon, Silicon Dioxide and Glass. Journal of Micromechanics and Microengineering. 24 (3), 10–35.Lieberman, M. A. Principles of Plasma Discharges and Materials Processing / M. A. Lieberman, A. J. Lichtenberg. USA: John Wiley & Sons, Inc. 2005.Lieberman M. A., Lichtenberg A. J. (2005) Principles of Plasma Discharges and Materials Processing. USA, John Wiley and Sons, Inc. Publ.Belford, R. E. Surface Activation Using Remote Plasma for Hydrophilic Bonding at Elevated Temperature / R. E. Belford, S. Sood // Electrochemical and Solid State Letters. 2007. Vol. 10, No 5. DOI: 10.1149/1.2709397.Belford R. E., Sood S. (2007) Surface Activation Using Remote Plasma for Hydrophilic Bonding at Elevated Temperature. Electrochemical and Solid State Letters. 10 (5). DOI: 10.1149/1.2709397.

The authors declare that there are no conflicts of interest present.