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For citations:

Demidovich S., Yunik A., Kovalchuk N., Solovjov J. The Influence of Technological Parameters of Deposition of Dielectric Layers by the ICP CVD Method on Surface Leakage Currents in AlGaN/GaN HEMT. Doklady BGUIR. 2026;24(1):5-12. (In Russ.) https://doi.org/10.35596/1729-7648-2026-24-1-5-12

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ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

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