bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2026-24-1-5-12bsuir-4292Research ArticleСтатьиВлияние технологических параметров осаждения диэлектрических слоев методом ICP CVD на поверхностные токи утечки в AlGaN/GaN HEMTThe Influence of Technological Parameters of Deposition of Dielectric Layers by the ICP CVD Method on Surface Leakage Currents in AlGaN/GaN HEMTДемидовичС. А.DemidovichS.

Демидович Сергей Александрович -вед. инж. отрасл. лаб. новых технологий и материалов научно-технического цент­ра (НТЦ);  асп., 

220108, Минск, ул. Корженевского, 16

Тел.: +375 29 207-10-84 

Demidovich Sergey - Leading Engineer at the R&D Center for Branch Laboratory of New Technologies and Materials, Postgraduate

220108, Minsk, Korzhenevskogo St., 16

Tel.: +375 29 207-10-84 

SDemidovich@integral.byЮникА. Д.YunikA.

Вед. инж. отрасл. лаб. новых технологий и материалов НТЦ

Минск

Andrey Yunik - Leading Engineer at the R&D Center for Branch Laboratory of New Technologies and Materials

Minsk 

КовальчукН. С.KovalchukN.

Канд. техн. наук, доц., зам. ген. дир. – гл. инж.

Минск

Natallia Kovalchuk - Cand. Sci. (Tech.), Associate Professor, Deputy General Director – Chief Engineer

Minsk 

СоловьёвЯ. А.SolovjovJa.

Д-р техн. наук, доц., зав. отрасл. лаб. новых технологий и материалов НТЦ

Минск

Jaroslav Solovjov - Dr. Sci. (Tech.), Associate Professor, Head of the Laboratory of New Technologies and Materials

Minsk 

ОАО «ИНТЕГРАЛ» – управляющая компания холдинга «ИНТЕГРАЛ» ; Белорусский государственный университет информатики и радиоэлектроникиJSC “INTEGRAL” – Manager Holding Company “INTEGRAL” ; Belarusian State University of Informatics and RadioelectronicsОАО «ИНТЕГРАЛ» – управляющая компания холдинга «ИНТЕГРАЛ»JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”202604032026241512Copyright © Демидович С.А., Юник А.Д., Ковальчук Н.С., Соловьёв Я.А., 20262026Демидович С.А., Юник А.Д., Ковальчук Н.С., Соловьёв Я.А.Demidovich S., Yunik A., Kovalchuk N., Solovjov J.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/4292

Исследовано влияние технологических параметров осаждения диэлектрических пассивирующих пленок методом ICP CVD (соотношение газов, мощность индуктивно-связанной плазмы, температура подложки, рабочее давление) на структурные и электрофизические свойства слоев AlGaN-поверхности. Показано, что предварительная плазмохимическая обработка AlGaN в кислородной среде приводит к формированию контролируемого оксидного интерфейса, снижающего поверхностные состояния и подавляющего токи утечки сток-исток в закрытом состоянии на два-три порядка. Установлена корреляция между режимами осаждения нитрида кремния (SiN) и степенью плазменного повреждения AlGaN/GaN-гетероструктур. Для минимизации деградации предложен композитный диэлектрик на основе кислородсодержащего нитрида кремния (SiON). Ключевым результатом является разработка комбинированного подхода: предварительная модификация поверхности AlGaN кислородной плазмой с последующим осаждением SiON в мягком режиме ICP CVD (мощность ≤300 Вт, давление ≥14 Па). Полученные результаты демонстрируют перспективность комбинированного подхода (предварительная модификация поверхности + управляемая пассивация) для минимизации деградации электрофизических свойств HEMT-структур.

The influence of technological parameters of deposition of dielectric passivating films by the ICP CVD method (gas ratio, inductively coupled plasma power, substrate temperature, operating pressure) on the structural and electrophysical properties of AlGaN surface layers was studied. It is shown that preliminary plasma-chemical treatment of AlGaN in an oxygen environment leads to the formation of a controlled oxide interface, which reduces surface states and suppresses drain-source leakage currents in the closed state by two to three orders of magnitude. A correlation was established between silicon nitride (SiN) deposition conditions and the degree of plasma-induced damage to AlGaN/GaN heterostructures. To minimize degradation, a composite dielectric based on oxygen-containing silicon nitride (SiON) is proposed. The key result is the development of a combined approach: preliminary modification of the AlGaN surface with oxygen plasma followed by SiON deposition in a low-power ICP CVD regime (power ≤300 W, pressure ≥14 Pa). The obtained results demonstrate the promise of the combined approach (surface pre-modification + controlled passivation) for minimizing the degradation of the electrophysical properties of HEMT structures.

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The authors declare that there are no conflicts of interest present.