The Influence of Technological Parameters of Deposition of Dielectric Layers by the ICP CVD Method on Surface Leakage Currents in AlGaN/GaN HEMT
https://doi.org/10.35596/1729-7648-2026-24-1-5-12
Abstract
The influence of technological parameters of deposition of dielectric passivating films by the ICP CVD method (gas ratio, inductively coupled plasma power, substrate temperature, operating pressure) on the structural and electrophysical properties of AlGaN surface layers was studied. It is shown that preliminary plasma-chemical treatment of AlGaN in an oxygen environment leads to the formation of a controlled oxide interface, which reduces surface states and suppresses drain-source leakage currents in the closed state by two to three orders of magnitude. A correlation was established between silicon nitride (SiN) deposition conditions and the degree of plasma-induced damage to AlGaN/GaN heterostructures. To minimize degradation, a composite dielectric based on oxygen-containing silicon nitride (SiON) is proposed. The key result is the development of a combined approach: preliminary modification of the AlGaN surface with oxygen plasma followed by SiON deposition in a low-power ICP CVD regime (power ≤300 W, pressure ≥14 Pa). The obtained results demonstrate the promise of the combined approach (surface pre-modification + controlled passivation) for minimizing the degradation of the electrophysical properties of HEMT structures.
Keywords
Supporting agencies: This research was supported by a grant from the President of the Republic of Belarus.
About the Authors
S. Demidovich
JSC “INTEGRAL” – Manager Holding Company “INTEGRAL” ; Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Demidovich Sergey - Leading Engineer at the R&D Center for Branch Laboratory of New Technologies and Materials, Postgraduate
220108, Minsk, Korzhenevskogo St., 16
Tel.: +375 29 207-10-84
A. Yunik
JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”
Belarus
Belarus
Andrey Yunik - Leading Engineer at the R&D Center for Branch Laboratory of New Technologies and Materials
Minsk
N. Kovalchuk
JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”
Belarus
Belarus
Natallia Kovalchuk - Cand. Sci. (Tech.), Associate Professor, Deputy General Director – Chief Engineer
Minsk
Ja. Solovjov
JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”
Belarus
Belarus
Jaroslav Solovjov - Dr. Sci. (Tech.), Associate Professor, Head of the Laboratory of New Technologies and Materials
Minsk
References
1. Tomosh K. N., Pavlov A. Y., Pavlov V. Y., Khabibullin R. A., Arutyunyan S. S., Maltsev P. P. (2016). Investiga tion of the Fabrication Processes of AlGaN/AlN/GaN НЕМТs with in SITU Si3N4 Passivation. Semiconductors. 50 (10),1416–1420.
2. Szyszka A., Wośko M., Paszkiewicz B., Paszkiewicz R. (2019) Surface Electrical Characterization of Defect Related Inhomogeneities of AlGaN/GaN/Si Heterostructures Using Scanning Capacitance Microscopy. Materials Science in Semiconductor Processing. 94, 57–63. DOI: 10.1016/j.mssp.2019.01.043.
3. Mao L.-F. (2008) Investigating the Effects of the Interface Defects on the Gate Leakage Current in MOSFETs. Applied Surface Science. 254 (20), 6628–6632. DOI: 10.1016/j.apsusc.2008.04.045.
4. Deng L., Zhou L., Lu H., Yang L., Yu Q., Zhang M., et al. (2023) Comprehensive Comparison of MOCVD- and LPCVD-SiN x Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications. Micromachines. 14 (11). DOI: 10.3390/mi14112104.
5. Meyer D. J., Flemish J. R., Redwing J. M. (2008) Pre-Passivation Plasma Surface Treatment Effects on Critical Device Electrical Parameters of AlGaN/GaN HEMTs. International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008. 261–264.
6. Lee J., Kim H., Seo K., Cho C., Cha H. (2016) High Quality PECVD SiO2 Process for Recessed MOSGate of AlGaN/GaN-On-Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors. Solid State Electron. 122, 32–36.
7. Chakroun A., Jaouad A., Soltani A., Arenas O., Aimez V., Arès R., et al. (2017) AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process. IEEE Electr. Device Lett. 38, 779–782.
8. Zhu G., Liang G., Zhou Y., Chen X., Xu X., Feng X., et al. (2018) Reactive Evaporation of SiOx Films for Passivation of GaN High-Electron-Mobility Transistors. Journal of Physics and Chemistry of Solids. DOI: 10.1016/j.jpcs.2018.12.021.
9. Kaushik J. K., Balakrishnan V. R., Mongia D., Kumar U., Dayal S., Panwar B. S., et al. (2016) Investigation of Surface Related Leakage Current in AlGaN/GaN High Electron Mobility Transistors. Thin Solid Films. 612, 147–152. DOI: 10.1016/j.tsf.2016.06.003.
10. Hua M., Liu C., Yang S., Liu S., Fu K., Dong Z., et al. (2015) GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric. IEEE Electron Device Letters. 36 (5), 448–450. DOI: 10.1109/LED.2015.2409878.
11. Sleptsova A. A., Chernykh S. V., Podgorny D. A., Zhilnikov I. A. (2020) Optimization of Passivation in AlGaN/GaN Heterostructure Microwave Transistor Fabrication by ICP CVD. Electronic Engineering Materials. 23 (2), 127–133. DOI: 10.17073/1609-3577-2020-23-2-127-133 (in Russian).
12. Jin C. (2018) Silicon Nitride Has Been Broadly Used as a Passivation Film Material and Shown to Improve Device Performance. Electronics Letters. 54 (15). DOI: 10.1049/el.2018.1401.
13. Liu S.-C., Huang C.-K., Chang C.-H., Lin Y.-C., Chen B.-Y., Tsai S.-P., et al. (2017) Effective Passivation with High-Density Positive Fixed Charges for GaN MIS-HEMTs. IEEE Journal of the Electron Devices Society. 5 (3), 170–174. DOI: 10.1109/jeds.2017.2669100.
14. Joglekar S., Azize M., Jones E. J., Piedra D., Gradecak S., Palacios T. (2016). Impact of Al2O3 Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 63 (1), 318–325. DOI: 10.1109/ted.2015.2500159.
15. Stoklas R., Gregušová D., Blaho M., Frӧhlich K., Novák J., Matys M., et al. (2017) Influence of OxygenPlasma Treatment on AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with HfO2 by Atomic Layer Deposition: Leakage Current and Density of States Reduction. Semiconductor Science and Technology. 32 (4). DOI: 10.1088/1361-6641/aa5fcb.
16. Koehler A. D. (2016) Advances in AlGaN/GaN HEMT Surface Passivation. ECS Trans. 75–99. DOI: 10.1149/07512.0099ecst.
17. Chenkai D., Peiran W., Chuying T. (2024) Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique. Nanomaterials. 14 (18). DOI: 10.3390/nano14181471.
18. Tongde H., Johan В. (2018) Bergsten Small- and Large-Signal Analyses of Different Low-Pressure-ChemicalVapor-Deposition SiNₓ Passivations for Microwave GaN HEMTs. IEEE Transactions on Electron Devices. 99, 1–7. DOI: 10.1109/TED.2017.2789305.
Review
For citations:
Demidovich S., Yunik A., Kovalchuk N., Solovjov J. The Influence of Technological Parameters of Deposition of Dielectric Layers by the ICP CVD Method on Surface Leakage Currents in AlGaN/GaN HEMT. Doklady BGUIR. 2026;24(1):5-12. (In Russ.) https://doi.org/10.35596/1729-7648-2026-24-1-5-12
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