Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement
https://doi.org/10.35596/1729-7648-2024-22-6-81-89
Abstract
This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench-IGBT (SJ-IGBT), Deep Trench SJ-IGBT (DT-SJ-IGBT), Floating p-region SJ-IGBT (FP-SJ-IGBT), and Step-Doped Collector Trench-IGBT. The operating principles of these insulated gate bipolar transistor design solutions are discussed. A particular focus is placed on the Step-Doped Collector Trench-IGBT structure, which demonstrates reduced switching losses.
About the Authors
Trong Thanh Nguyen
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Trong Thanh Nguyen, Postgraduate at the Department of Micro- and Nanoelectronics
Minsk
Dao Dinh Ha
Le Quy Don University of Science and Technology
Viet Nam
Viet Nam
Dao Dinh Ha, Саnd. of Sci., Lecturer at the Department of Microprocessor Engineering
Hanoi
I. Yu. Lovshenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Lovshenko Ivan Yur’evich, Head of the R&D Lab. “Computer-Aided Design of Micro- and Nanoelectronic Systems” (Lab 4.4)
220013, Minsk, P. Brovki St., 6
Тел.: +375 17 293-88-90
V. R. Stempitsky
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Stempitsky V. R., Саnd. of Sci., Associate Professor, Vice-Rector for Academic Affairs, Adviser of the Research Lab 4.4
Minsk
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Review
For citations:
Nguyen T.T., Ha D.D., Lovshenko I.Yu., Stempitsky V.R. Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement. Doklady BGUIR. 2024;22(6):81-89. (In Russ.) https://doi.org/10.35596/1729-7648-2024-22-6-81-89
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