Formation of SiC by Vacuum Carbidization on Porous Silicon
https://doi.org/10.35596/1729-7648-2022-20-6-14-22
Abstract
Planar-view TEM investigation revealed the formation of cubic silicon carbide layers on porous silicon by vacuum carbidization. The formation of cubic silicon layers in the form of a two-phase system was found. At the same time, the formed SiC layers on the mesoporous buffer layer are predominantly polycrystalline. Using the Rutherford backscattering method, it was found that the use of buffer layers of porous silicon makes it possible to obtain SiC layers of greater thickness than on a pure silicon substrate under similar conditions of vacuum carbidization. It is shown that an increase in the pore size in porous silicon layers leads to an increase in the thickness of the formed SiC layers. It has been shown by scanning electron microscopy that vacuum carbideization of porous silicon leads to formation of SiC grains in pores, partial overgrowth and sintering of pores. The dependence of the SiC grain size on the pore size was established.
About the Authors
M. V. Labanok
Belarusian State University
Belarus
Belarus
Labanok M.V., Postgraduate at the Physical Electronics and Nanotechnologies Department
220064, Minsk, Kurchatova St., 5, tel. +375 29 654-09-53
S. L. Prakopyeu
Belarusian State University
Belarus
Belarus
Prakopyeu S.L., Senior Lecturer at the Physical Electronics and Nanotechnologies Department
S. A. Zavatski
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Zavatski S.A., Postgraduate at the Micro- and Nanoelectronics Department
V. P. Bondarenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Bondarenko V.P., Cand. of Sci., Associate Professor, Head of Laboratory 4.3
P. I. Gaiduk
Belarusian State University
Belarus
Belarus
Gaiduk P.I., Dr. of Sci. (Phys. and Math.), Professor at the Physical Electronics and Nanotechnologies Department
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Review
For citations:
Labanok M.V., Prakopyeu S.L., Zavatski S.A., Bondarenko V.P., Gaiduk P.I. Formation of SiC by Vacuum Carbidization on Porous Silicon. Doklady BGUIR. 2022;20(6):14-21. (In Russ.) https://doi.org/10.35596/1729-7648-2022-20-6-14-22
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