Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching | Emelyanov | Doklady BGUIR

Doklady BGUIR
Doklady BGUIR

eng | рус

ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

Preview

Doklady BGUIR

Advanced search

Archives

Download this PDF file

For citations:

Emelyanov V.V. Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching. Doklady BGUIR. 2022;20(1):48-54. (In Russ.) https://doi.org/10.35596/1729-7648-2022-20-1-48-54

Views: 330

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 License.

ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)