Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure | Lovshenko | Doklady BGUIR

Doklady BGUIR
Doklady BGUIR

eng | рус

ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

Preview

Doklady BGUIR

Advanced search

Archives

Download this PDF file

For citations:

Lovshenko I.Yu., Stempitsky V.R., Shandarovich V.T. Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure. Doklady BGUIR. 2020;18(7):55-62. (In Russ.) https://doi.org/10.35596/1729-7648-2020-18-7-55-62

Views: 316

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 License.

ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

* not an advertisement

Indexing Databases

* not an advertisement

Popular articles

Editor-in-Chief

Vadim Bogush

Article Tools

Finding References

Email this article (Login required)

Email the author (Login required)

About the Authors

I. Yu. Lovshenko
Belarusian State University of Informatics and Radioelectronics
Russian Federation

Lovshenko Ivan Yur'evich, Head of the Research Laboratory “CAD in Micro- and Nanoelectronics” (R&D Lab 4.4)

V. R. Stempitsky
Belarusian State University of Informatics and Radioelectronics
Russian Federation

PhD., Associate Professor, Deputy Head of Research and Development Department Sc. Adviser of “CAD in Micro- and Nanoelectronics” (R&D Lab 4.4)

Minsk

V. T. Shandarovich
Belarusian State University of Informatics and Radioelectronics
Russian Federation

PG student of Micro- and Nanoelectronics Department, Researcher of the Research Laboratory “CAD in Micro- and Nanoelectronics” (R&D Lab 4.4)

Minsk

Notifications