Preview

User

Not a user? Register with this site Forgot your password?

Doklady BGUIR

Advanced search
Fullscreen

For citations:

Volcheck V.S., Lovshenko I.Yu., Shandarovich V.T., Ha D.D. Gallium nitride high electron mobility transistor with an effective graphene-based heat removal system. Doklady BGUIR. 2020;18(3):72-80. (In Russ.) https://doi.org/10.35596/1729-7648-2020-18-3-72-80

Views: 420


Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.


ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

P. Brovka st., 6, room 326, Minsk, 220013, Republic of Belarus
Educational institution «Belarusian State University of Informatics and Radioelectronics»
tel. +375-17-293-88-41
e-mail: doklady@bsuir.by

supported by NEICON (Ejournal lab)