THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING
https://doi.org/10.35596/1729-7648-2019-125-7-101-106
Abstract
The paper presents the results of a study of thin-film transistors based on the InGaZnO semiconductor compound (IGZO) for active-matrix displays addressing formed by magnetron plasma-chemical deposition. Their structural-morphological and electrophysical properties are investigated. Carrier mobility is analyzed using the Hall method. The effect of annealing in vacuum, an oxygen atmosphere, and a nitrogen atmosphere on the grain size of an IGZO film was investigated. The resulting layers are characterized by high mobility of charge carriers, which allows their use in the manufacture of new-generation LCD and OLED displays.
About the Authors
B. A. Kazarkin
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
PG student
220013, Republic of Belarus, Minsk, P. Brovki st., 6
tel. +375-17-293-88-75
A. A. Stepanov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Senior researcher of SRL 4.7 of R&D Department
220013, Republic of Belarus, Minsk, P. Brovki st., 6
tel. +375-17-293-88-75
Y. U. Mukha
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Researcher of SRL 4.7 of R&D Department
220013, Republic of Belarus, Minsk, P. Brovki st., 6
tel. +375-17-293-88-75
I. I. Zakharchenia
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Engineer of SRL 4.7 of R&D Department
220013, Republic of Belarus, Minsk, P. Brovki st., 6
tel. +375-17-293-88-75
Y. A. Khakhlou
IZOVAC Group
Russian Federation
Russian Federation
Head of Technological Development Department
A. G. Smirnov
Belarusian State University of Informatics and Radioelectronics
Russian Federation
Smirnov Aliaksandr Georgievich,Doctor of Technical Sciences, professor, head of SRL 4.7 of R&D Department
Russian Federation
Smirnov Aliaksandr Georgievich,Doctor of Technical Sciences, professor, head of SRL 4.7 of R&D Department
220013, Republic of Belarus, Minsk, P. Brovki st., 6
tel. +375-17-293-88-75
References
1. Kamiya T., Nomura K., and Hosono H. Present status of amorphous In–Ga–Zn–O thin-film transistors. Science and Technology of Advanced Materials. 2010; 11 (4): 044305.
2. Shin, Y.; Kim, S. T.; Kim, K.; Kim, M. Y.; Oh, S.; Jeong, J. K. J. The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-Temperature Crystallization Using a Tantalum Catalytic Layer. Sci. Rep. 2017; 7: 10885.
3. Hosono H., еt al. Transparent Amorphous Oxide Semiconductors for High Performance, SID’07, Dig., 2007;1830.
4. Suresh A. and Muth J. F. Bias stress stability of indium gallium zinc oxide channel based transparent thin lm transistors. Applied Physics Letters, 2008; 92 (3):033502.
5. Yoon, S.-J.; Seong, N.-J.; Choi, K.; Shin, W.-C.; Yoon, S.-M. Investigations on the bias temperature stabilities of oxide thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition. RSC Adv. 2018; 8: 25014-25020.
6. Nomura K., et al. Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors. Applied Physics Letters, 2009; 95: 013502.
7. Kim, G. H.; Shin, H. S.; Ahn, B. D.; Kim, K. H.; Park, W. J.; Kim, H. J. Formation Mechanism of Solution- Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor. J. Electrochem. Soc. 2009; 156, 7-9.
Review
For citations:
Kazarkin B.A., Stepanov A.A., Mukha Y.U., Zakharchenia I.I., Khakhlou Y.A., Smirnov A.G. THIN FILM TRANSISTORS WITH InGaZnO-SEMICONDUCTOR LAYER FOR ACTIVE MATRIX ADDRESSING. Doklady BGUIR. 2019;(7 (125)):101-106. (In Russ.) https://doi.org/10.35596/1729-7648-2019-125-7-101-106
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