FORMATION OF POROUS SILICON ON A HIGHLY DOPED P-TYPE MONOCRYSTALLINE SILICON
https://doi.org/10.35596/1729-7648-2019-124-6-31-37
Abstract
Porous silicon layers were formed on a p-type silicon wafers by electrochemical anodisation. Dependencies of thickness and porosity of porous silicon layers as well as effective valence of silicon dissolution versus anodizing time and current density were obtained and analysed. A mathematical model for growth of layers of porous silicon was developed.
About the Authors
A. D. Hurbo
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Hurbo Aliaksandra Dzmitryeuna, student of Microand Nanoelectronics Department
220013, Minsk, P. Brovka str., 6
A. V. Klimenka
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Student of Microand Nanoelectronics Department
220013, Minsk, P. Brovka str., 6
V. P. Bondarenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
PhD, associate professor, head of SRL 4.3 R&D Department
220013, Minsk, P. Brovka str., 6
References
1. Uhlir A. Electrolytic Shaping of Germanium and Silicon // Bell System Technical Journal. 1956. doi.org/10.1002/j.1538-7305.1956.tb02385.x
2. Melikdzhanjan G.A., Martirosjan H.S. Analiz harakteristik plenok poristogo kremnija, poluchennogo na monokristallicheskom kremnii p-tipa // Izv. NAN Armenii, ser. Fizika. 2012. T. 47, № 3. S. 201–206. (in Russ.)
3. Formirovanie i struktura mezoporistogo kremnija / N.I. Kargin [i dr.] // Materialy jelektronnoj tehniki. 2013. № 4. S. 4–6. (in Russ.)
4. Bondarenko V.P. Issledovanie processa formirovanija poristogo kremnija i razrabotka na ego osnove mezhkomponentnoj izoljacii poluprovodnikovyh integral'nyh mikroshem: diss. … kand. tehn. nauk. Minsk, 1980. (in Russ.)
Review
For citations:
Hurbo A.D., Klimenka A.V., Bondarenko V.P. FORMATION OF POROUS SILICON ON A HIGHLY DOPED P-TYPE MONOCRYSTALLINE SILICON. Doklady BGUIR. 2019;(6):31-37. (In Russ.) https://doi.org/10.35596/1729-7648-2019-124-6-31-37
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