FORMATION OF POROUS SILICON ON A HIGHLY DOPED P-TYPE MONOCRYSTALLINE SILICON | Hurbo | Doklady BGUIR

Doklady BGUIR
Doklady BGUIR

ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

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Hurbo A.D., Klimenka A.V., Bondarenko V.P. FORMATION OF POROUS SILICON ON A HIGHLY DOPED P-TYPE MONOCRYSTALLINE SILICON. Doklady BGUIR. 2019;(6):31-37. (In Russ.) https://doi.org/10.35596/1729-7648-2019-124-6-31-37

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ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

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About the Authors

A. D. Hurbo
Belarusian State University of Informatics and Radioelectronics
Belarus

Hurbo Aliaksandra Dzmitryeuna, student of Microand Nanoelectronics Department

220013, Minsk, P. Brovka str., 6

A. V. Klimenka
Belarusian State University of Informatics and Radioelectronics
Belarus

Student of Microand Nanoelectronics Department

220013, Minsk, P. Brovka str., 6

V. P. Bondarenko
Belarusian State University of Informatics and Radioelectronics
Belarus

PhD, associate professor, head of SRL 4.3 R&D Department

220013, Minsk, P. Brovka str., 6

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