Modeling of electrons transfer in silicon carbide semiconductor structures
Abstract
The results of the simulation of electron transfer processes in the three-dimensional structure of 4H-SiC silicon carbide are presented using the Monte Carlo method. The dependence of the average drift velocity, average energy and electron mobility of electrons and the diffusion coefficient from the electric field are obtained.
About the Authors
V. V. Murav'ev
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
V. N. Mishchenka
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
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Review
For citations:
Murav'ev V.V., Mishchenka V.N. Modeling of electrons transfer in silicon carbide semiconductor structures. Doklady BGUIR. 2017;(2):53-57. (In Russ.)
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