FEATURES OF ELECTROCHEMICAL DEPOSITION OF NICKEL IN MESOPOROUS SILICON

Abstract

Layers of mesoporous Silicon were formed on the surface of monocrystalline silicon wafers by electrochemical anodization in a solution of hydrofluoric acid. Nickel was electrochemically deposited in porous silicon. The dependence of the surface potential of mesoporous Silicon versus Nickel deposition time was investigated. Scanning electron microscopy was used to study the structure of the samples. At the initial stages of deposition in the lower part of the porous layer 30-60 nm grains of Nickel are formed. During the deposition the grain size increases up to 40-70 nm as well as their quantity. For large time of deposition the growth of Nickel grains starts also on the sample surface, and the deposited Nickel layer is quite dense, the size of Nickel grains in this layer does not exceed 10 nm. By monitoring the magnitude of the surface potential during the electrochemical deposition, we can determine the moment of complete filling of channels of pores with Nickel and beginning of the growth of Nickel continuous film on the surface of the sample.