INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY
Abstract
The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented. The specific features of the functioning of various constructive solutions IGBT are studied. A construction of SOI-IGBT structure with multiple gates, which allows a step change in the switched current, is suggested and investigated.
About the Authors
S. Ibrahim
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
I. Yu. Lovshenko
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
V. R. Stempitsky
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
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Review
For citations:
Ibrahim S., Lovshenko I.Yu., Stempitsky V.R. INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY. Doklady BGUIR. 2016;(8):89-93. (In Russ.)
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