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INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

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Abstract

The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented. The specific features of the functioning of various constructive solutions IGBT are studied. A construction of SOI-IGBT structure with multiple gates, which allows a step change in the switched current, is suggested and investigated.

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Ibrahim S., Lovshenko I.Yu., Stempitsky V.R. INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY. Doklady BGUIR. 2016;(8):89-93. (In Russ.)

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ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)