INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY
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Full Text:
Abstract
About the Authors
S. IbrahimBelarus
I. Yu. Lovshenko
Belarus
V. R. Stempitsky
Belarus
References
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Review
For citations:
Ibrahim S., Lovshenko I.Yu., Stempitsky V.R. INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY. Doklady BGUIR. 2016;(8):89-93. (In Russ.)
ISSN 2708-0382 (Online)