THE PHENOMENON OF IMPURITY SEGREGATION IN THE VICINITY OF P-N-JUNCTION
Abstract
On the basis of the microscopic diffusion mechanism due to formation, migration, and dissolution of «impurity atom-intrinsic point defect» pairs, the investigation of phenomenon of impurity segregation in the vicinity of p-n -junction was carried out. The nonuniform distribution of point defects responsible for impurity diffusion has been taken into account.
About the Author
O. I. Velichko
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
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Review
For citations:
Velichko O.I. THE PHENOMENON OF IMPURITY SEGREGATION IN THE VICINITY OF P-N-JUNCTION. Doklady BGUIR. 2016;(6):30-34. (In Russ.)
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