Doklady BGUIR
Doklady BGUIR

ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

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Trong T., Lovshenko I., Volcheck V., Novikov P., Stempitsky V. Super-Junction Insulated-Gate Bipolar Transistor with a Vertical Channel Arrangement and a Shielded Floating Charge-Carrier Accumulation Layer. Doklady BGUIR. 2026;24(5):24-32. (In Russ.) https://doi.org/10.35596/1729-7648-2026-24-5-24-32

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ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

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About the Authors

Thanh Nguyen Trong
Belarusian State University of Informatics and Radioelectronics
Belarus

Trong Thanh Nguyen, Postgraduate of the Department of Microand Nanoelectronics

Minsk

I. Lovshenko
Belarusian State University of Informatics and Radioelectronics
Belarus

Lovshenko I., Head of the Research Laboratory “Computer-Aided Design of Microand Nanoelectronic Systems” (Lab. 4.4)

Minsk

V. Volcheck
Belarusian State University of Informatics and Radioelectronics
Belarus

Volcheck Vladislav, Cand. Sci. (Tech.), Senior Researcher at the Lab. 4.4 Tel.: +375 17 293-86-79

220013, Minsk, P. Brovki St., 6

P. Novikov
Belarusian State University of Informatics and Radioelectronics
Russian Federation

Novikov P., Junior Research at the Lab. 4.4

Minsk

V. Stempitsky
Belarusian State University of Informatics and Radioelectronics
Russian Federation

Stempitsky V., Cand. Sci. (Tech.), Associate Professor, Scientific Director of the Lab. 4.4, Vice-Rector for Research

Minsk

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