Multilayer Memory Elements Al-Al<2>текстTe3-SnTe-TeO2-SnTe-Me
https://doi.org/10.35596/1729-7648-2026-24-4-47-53
Abstract
This article presents a study of the physical processes at the interface in thin-film structures based on two- and three-component chalcogenides, which determine the mechanisms of phase transitions and memory. An alternative concept for resistive threshold switching at the interfaces of two- and three-component chalcogenide semiconductor materials is proposed, resulting in the formation of metastable dichalcogenide compounds. Methods for the structural stabilization of such compounds are discussed.
About the Authors
Ye. Troyan
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Troyan Ye., Сand. Sci. (Tech.), Associate Professor of the Department of Micro- and Nanoelectronics
220013, Minsk, P. Brovki St., 6
A. Smirnov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Smirnov A., Dr. Sci. (Tech.), Honorary Professor, Head of the Laboratory of Information Processing and Display Devices
220013, Minsk, P. Brovki St., 6
A. Stepanov
1Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Stepanov A., Сand. Sci. (Tech.), Associate Professor of the Department of Micro- and Nanoelectronics
220013, Minsk, P. Brovki St., 6
S. Kharkov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Kharkov S., Postgraduate of Micro- and Nanoelectronics Department
220013, Minsk, P. Brovki St., 6
E. Koroleva
A. F. Ioffe Physical-Technical Institute
Russian Federation
Russian Federation
Koroleva E., Сand. Sci. (Phys. and Math.), Senior Researcher
Saint Petersburg
A. Filimonov
Peter the Great St. Petersburg Polytechnic University
Russian Federation
Russian Federation
Filimonov A., Dr. Sci. (Phys. and Math.), Professor
Saint Petersburg
References
1. Kolobov A. V., Lazarenko P. I. (2025) Chalcogenide Glassy Semiconductors in Memory and Information Processing Devices. Physics and Technology of Semiconductors. 59 (9), 511–539 (in Russian).
2. Troyan E., Doronin A. (2021) Change of GeTe/Sb2Te3 Thin-Film Memory Elements Resistance RON Under External Pressure. Comprehensible Science. 427–433.
3. Pandian R., Kooi B. J., Palasantzas G., De Hosson J. T. M., Pauza A. (2007) Nanoscale Electrolytic Switching in Phase-Change Chalcogenide Films. Advanced Materials. 19 (24), 4431–4437. DOI: 10.1002/adma.200700904.
4. Kolosnitcin B. S., Troyan E. F. (2017) Switching and Memory Effects in Thin Film Disoder Chalcoginide Semiconductors. Doklady BGUIR. (2), 25–30 (in Russian).
5. Troyan E. F., Smirnov A. G., Stepanov A. A., Zhovnerik N. V., Sun Hiao Wei, Liu Zhengbia (2024) Memory and Switching Processes in Thin-Film Structures Based on Two- and Three-Component Chalcogenides. Proceedings of the Kabardino-Balkarian State University. XIV (3), 11–14.
6. Troyan E. F. Patent US 9,865,811, Jan.9, 2018, Patent RF2618959, 2017; Patent EP3151294, 2019.
7. Xia Mengjiao, Ding Keyuan, Rao Feng, Li Xianbin, Wu Liangcai, Song Zhitang (2015) Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties. Scientific Reports. 5 (1).
8. Pumlianmunga R. K. (2017) Electrical Switching, Local Structure and Thermal Crystallization in Al-Te Glasses. Materials Research Bulletin. 86, 88–94.
9. Siddique S., Gowda Ch. Ch., Demiss S., Tromer R., Paul S., Sadasivuni K. K., et al. (2021) Emerging Two-Dimensional Tellurides. Materials Today. 1–23.
10. Marchenko A. V., Terukov E. I., Nasredinov F. S., Petrushin Yu. A., Seregin P. P. (2021) Local Structure of Germanium Atoms and Anti-Structur Defects of Tin in Amorphous and Crystalline Ge2Sb2Te5 Films. Physics and Technology of Semiconductors. 55 (1), 3–8 (in Russian).
11. Kerres P., Mazzarello R., Cojocaru-Mirédin O., Wuttig M. (2024) Growth of Textured Chalcogenide Thin Films. Physica Status Solidi, A. 221 (22). DOI: 10.1002/pssa.202300921.
12. Branzi L., Martyn J., Fitzsimmons L., Gun’ko Y. K. (2025) Chirality in Transition Metal Dichalcogenide Nanostructures. Chemistry: A European Journal. 31 (35), 1–27.
13. Li Xue, McHugh G. J., Fal’ko V. I. (2025) Ferroelectric Properties of Van der Waals Chalcogenides: A Density Functional Theory Perspective. Academia Nano: Science, Materials, Technology. 2, 1–9.
14. Kononov A. A., Gastro R. A., Saito Yu., Fons P., Bordovsky G., Anisimova N. I., et al. (2021) Dielectric Relaxation in Amorphous and Crystalline Sb2Te3 Thin Films. Journal of Materials Science: Materials in Electronics. 32, 14072–14078.
Review
For citations:
Troyan Ye., Smirnov A., Stepanov A., Kharkov S., Koroleva E., Filimonov A. Multilayer Memory Elements Al-Al<2>текстTe3-SnTe-TeO2-SnTe-Me. Doklady BGUIR. 2026;24(4):47-53. (In Russ.) https://doi.org/10.35596/1729-7648-2026-24-4-47-53
Views:
11
JATS XML
Email this article 