Лавинные светодиоды на основе наноструктурированного кремния для СВЧ-диапазона частот

Для развития кремниевой фотоники необходима разработка эффективного источника светового сигнала. В качестве такого источника могут использоваться лавинные кремниевые светодиоды. В статье рассмотрены лавинные светодиоды на основе наноструктурированного кремния. Измерение емкости светодиодных структур показало, что при уменьшении площади светодиодов до 100 мкм² суммарная емкость светодиода и металлической разводки уменьшается до сотен фемтофарад, что обеспечивает лавинным светодиодам функционирование в СВЧ-диапазоне. Показано, что увеличение быстродействия лавинных светодиодов ограничено резистивно-емкостными задержками, зависящими от барьерной емкости диодных структур. Рассмотрены способы увеличения быстродействия лавинных светодиодов как в сверхвысоком частотном диапазоне, так и в гипервысоком диапазоне частот. В частности, при уменьшении рабочей площади светодиодов до 1 мкм² прогнозируется их функционирование во всем гигагерцовом диапазоне частот.

1. Lazarouk S. K., Leshok A. A., Kozlova T. A., Dolbik A. V., Vi L. D., Ilkov V. K. (2019) 3D Silicon Photonic Structures Based on Avalanche LED with Interconnections Through Optical Interposer. International Journal of Nanoscience. 18 (3–4).

2. Jaguiro P., Katsuba P., Lazarouk S., Moore S., Smirnov A. (2009) Si-Based Optoelectronic Couple. Physica E: Low-Dimensional Systems and Nanostructures. 41 (6), 1094–1096.

3. Lazarouk S., Leshok A., Borisenko V., Mazzoleni C., Pavesi L. (2000) On the Route Towards Si-Based Optical Interconnects. Microelectronic Engineering. 50 (1–4), 81–86.

4. Lazarouk S., Jaguiro P., Borisenko V. (1998) Integrated Optoelectronic Unit Based on Porous Silicon. Physica of Status Solidi (a). 165 (1), 87–90.

5. Lazarouk S. K., Jaguiro P. V., Leshok A. A., Borisenko V. E. (2003) Reverse Biased Porous Silicon Light-Emitting Diodes for Optical Intra-Chip Interconnects. Physica E: Low-Dimensional Systems and Nanostructures. 16 (3–4), 495–498.

6. La Monica S., Maiello G., Ferrari A., Masini G., Lazarouk S., Jaguiro P., et al. (1997) Progress in the Field of Integrated Optoelectronics Based on Porous Silicon. Thin Solid Films. 297 (1–2), 265–267.

7. Balucani M., La Monica S., Lazarouk S., Maiello G., Masini G., Ferrari A. (1997) Silicon Emitting Device Will Knock Down Communication Bottleneck? Solid State Phenomena. 54, 8–12.

8. Yizhou H., QianxiH., Xue Y., Jiamin Y., Chi Z., Ruoyu L., et al. (2025) Triethoxysilane-Derived Silicon Quantum Dots: A Novel Pathway to Small Size and High Crystallinity. Journal of Materials Science & Technology. 219, 59–74.

9. Katsuba P., Jaguiro P., Lazarouk S., Smirnov A. (2009) Stable Electroluminescence of Nanostructured Silicon Embedded into Anodic Alumina. Physica E: Low-Dimensional Systems and Nanostructures. 41, 931–934.

10. Lazarouk S. K., Leshok A. A., Labunov V. A., Borisenko V. E. (2005) Efficiency of Avalanche Light-Emitting Diodes Based on Porous Silicon. Semiconductors. 39 (1), 136–138.

11. Lazarouk S., Bondarenko V., La Monica S., Maello G., Masini G., Pershukevich P., et al. (1996) Electroluminescence from Aluminum-Porous Silicon Reverse Bias Schottky Diodes Formed on the Base of Highly Doped n-Type Polysilicon. Thin Solid Films. 276, 296–298.

12. Lazarouk S., Bondarenko V., Pershukevich P., La Monica S., Maiello G. (1994) Visible Electroluminescence from Al-Porous Silicon Reverse Bias Diodes Formed on the Base of Degenerate n-Type Silicon. MRS Online Proceedings Library Archive. 358, 659–664.

13. Jaguiro P., Katsuba P., Lazarouk S., Smirnov A. (2007) Porous Silicon Avalanche LEDs and Their Applications in Optoelectronics and Information Displays. Acta Physica Polonica A. 112 (5), 1031–1036.

14. Lazarouk S. K., Sasinovich D. A., Katsuba P. S., Labunov V. A., Leshok A. A., Borisenko V. E. (2007) Electroluminescence from Nanostructured Silicon Embedded in Anodic Alumina. Semiconductors. 41 (9), 1109–1112.

15. Lazarouk S., Katsouba S., Tomlinson A., Benedetti S. (2000) Optical Characterization of Reverse Biased Porous Silicon Light Emitting Diode. Materials Science and Engineering. 69–70, 114–117.

16. Buzaneva E., Gorchinsky A., Popova G., Veblaya T., Zankovych S., Boiko Yu., et al. (2000) Photophysical Properties of Nano Si/SiOx Composites in Al/Composite Mono Si Structures for Green Light Emitting and Photodetector-Schottky Diodes. Materials Science in Semiconductor Processing. 3, 529–537.

17. Lazarouk S., Bondarenko V., Jaguiro P., Lacquaniti N., La Monica S., Maiello G., et al. (1996) Electrical Characterization of Visible Emitting Electroluminescent Schottky Diodes Based on n-Type Porous Silicon and on Highly Doped n-Type Porous Polysilicon. Journal of Non-Crystalline Solids. 198–200, 973–976.

18. La Monica S., Balucani M., Lazarouk S., Maiello G., Masini G., Jaguiro P., et al. (1997) Characterization of Porous Silicon Light Emitting Diodes in High Current Density Conditions. Solid State Phenomena. 54, 21–26.

19. Le Dinh Vi, Klutsky A. Yu., Dolbik A. A., Leshok A. A., Lazarouk S. K. (2019) Influence of Anodic Alumina Used as Separating Dielectric of Silicon Avalanche LEDs on Diode Characteristics. Doclady BGUIR. (7–8), 165–172 (in Russian).

20. Chatterjee A., Bhuva B., Schrimpf R. (2024) High-Speed Light Modulation in Avalanche Breakdown Mode for Si Diodes. IEEE Electron Device Letters. 25 (9), 628–630. DOI: 10.1109/LED.2004.834247.

21. Xu K. (2014) Electro-Optical Modulation Processes in Si-PMOSFET LEDs Operating in the Avalanche Light Emission Mode. IEEE Transactions on Electron Devices. 61 (6): 2085–2092. DOI: 10.1109/TED.2014.2318277.

22. Xu K. (2019) Silicon MOS Optoelectronic Micro‐Nano Structure Based on Reverse‐Biased PN Junction. Physica Status Solidi. 216 (7).

23. Ogudo K. A., Snyman L. W., Polleux J.-L., Viana C., Tegegne Z., Schmieder D. (2014) Towards 10–40 GHz on-Chip Micro-Optical Links with all Integrated Si Av LED Optical Sources, Si N Based Waveguides and Si-Ge Detector Technology. Proc. SPIE 8991, Optical Interconnects XIV. 8991, 1–16.

24. Le Dinh Vi, Leshok A. A., Dolbik A. V., Perko S. L., Lazarouk S. K. (2020) Avalanche Leds Based on Nanostructured Silicon for Optical Interconnections. Doklady BGUIR. 18 (3), 63–71.

25. Sze S. M., Pub K. K. Ng. (2006) Physics of Semiconductor Devices. Print ISBN: 9780471143239.

26. Lazarouk S., Xie Z., Chigrinov V., Kwok H. S. (2007) Anodic Nanoporous Titania for Electro-Optical Devices. Japanese Journal of Applied Physics. 46 (7R).

27. Lazarouk S., Leshok A., Dolbik A., Tomashevich L., Klyutsky A., Dudich V., et al. (2024) Development of Avalanche LEDs Based on Nanostructured Silicon for the Gigahertz Frequency Range. Electronic Design Automation Conference 2024 Proceedings. 79–82.

28. Lazarouk S., Dudzich U., Klyutsky A., Dolbik A., Labunov V. (2021) Photosensitive Properties of Avalanche LEDs Based on Nanostructured Silicon. XIX International Workshop on New Approaches to High-Tech: Nano-Design, Technology, Computer Simulations – NDTCS-2021. 79–80.

29. Belous A. I., Kazak N. S. (2022) Strategy for the Development of Belarusian Microelectronics for the Period 2022–2025. Russian Electronics. 16–20.

30. Borisenko V. E. (2014) Nanodimensional Semiconductors and Dielectrics: Achievements of Nanoelectronics and Novel Materials Center of BSUIR. Doklady BGUIR. (2), 5–13 (in Russian).

31. Lazarouk S., Bondarenko V., Borisenko V., Gaponenko N., Gorokh G., Leshok A., et al. (2024)