Avalanche LEDs Based on Nanostructured Silicon for Microwave Frequency Range

Development of an efficient light signal source is a basic necessity for the development of silicon photonics. Avalanche silicon light emitting diodes (LEDs) can serve as such a source. The article discusses avalanche LEDs based on nanostructured silicon. Measurement of the capacitance of LED structures has shown that when the LED area is reduced to 100 μm², the total capacitance of the LED and metal wiring is reduced to hundreds of femtofarads, which ensures the functioning of avalanche LEDs in the microwave range. It is shown that the increase in the speed of avalanche LEDs is limited by resistive-capacitive delays, depending on the barrier capacitance of the diode structures. Methods for increasing the speed of avalanche LEDs in both the ultra-high frequency range and the hyper-high frequency range are considered. In particular, by reducing the working area of LEDs to 1 µm², they are predicted to function over the entire gigahertz frequency range.

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