Transistor Structure with a Two-Dimensional Channel Electrophysical Parameters Interrelation Under Conditions of Instability | Zaitsau | Doklady BGUIR

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ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

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Zaitsau U.A., Podryabinkin D.A., Melnikova V.V., Danilyuk A.L. Transistor Structure with a Two-Dimensional Channel Electrophysical Parameters Interrelation Under Conditions of Instability. Doklady BGUIR. 2024;22(4):22-29. (In Russ.) https://doi.org/10.35596/1729-7648-2024-22-4-22-29

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ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

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About the Authors

U. A. Zaitsau
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus

Zaitsau Uladzimir Alexandrovich, Postgraduate at the Department of Microand Nanoelectronics,

6, P. Brovki St., Minsk, 220013

Phone: +375 17 293-22-24.

D. A. Podryabinkin
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus

Podryabinkin D. A., Cand. of Sci., Senior Researcher at the Center for Nanoelectronics and New Materials,

Minsk.

V. V. Melnikova
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus

Melnikova V. V., Postgraduate at the Department of Micro- and Nanoelectronics,

Minsk.

A. L. Danilyuk
Belarusian State University of Informatics and Radioelectronics (BSUIR)
Belarus

Danilyuk A. L., Cand. of Sci., Associate Professor, Associate Professor at the Department of Microand Nanoelectronics,

Minsk.

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