Transistor Structure with a Two-Dimensional Channel Electrophysical Parameters Interrelation Under Conditions of Instability

A model has been developed and patterns of mutual influence of the electrophysical parameters of a transistor structure with a two-dimensional channel, due to the self-organization of charge and capacitive properties under conditions of charge instability, have been obtained. Transition metal dichalcogenides are considered as a material for a two-dimensional channel. The influence on the electrical parameters of a transistor structure with a two-dimensional semiconductor channel of the band gap of the channel material, the thickness of the gate dielectric, and the capacitance of interface states is considered. It is shown that under conditions of instability caused by an increase in the capacitance of interface states, the dependence of the electrochemical potential, electron concentration and quantum capacitance on the potential of the field electrode has an abrupt form. The results obtained are explained by the fact that, under conditions of instability, an increase in the capacitance of interface states leads to a mismatch between the electrical neutrality condition and the Fermi-Dirac statistics at certain val ues of the gate potential due to the limited nature of the density of states of the two-dimensional channel, which leads to the manifestation of a charge imbalance. The resulting effect is similar to the metal-semiconductor transition and can be attributed to bistable critical phenomena. The developed model and the results obtained can be used in computer-aided design systems for the element base of micro- and nanoelectronics.

1. Liu Y., Duan X., Shin H.-J., Park S., Huang Yu, Duan X. (2021) Promises and Prospects of Two-Dimensional Transistor. Nature. 591, 43–53.

2. Knobloch T., Selberherr S., Grasser T. (2022) Challenges for Nanoscale CMOS Logic Based on TwoDimensional Materials. Nanomaterials. 12 (20).

3. Chhowalla M., Jena D., Zhang H. (2016) Two-Dimensional Semiconductors for Transistors. Nat. Rev. Mater. 1.

4. Luryi S. (1988) Quantum Capacitance Devices. Applied Physics Letters. 52, 501–503.

5. Ferry D. K. (2017) Electron Transport in Some Transition Metal Di-Chalcogenides: MoS2 and WS2. Semicond. Sci. Technol. 32.

6. Das S., Sebastian A., Pop E. (2021) Transistors Based on Two-Dimensional Materials for Future Integrated Circuits. Nat Electron. 4, 786–799.

7. Patel K. A., Grady R. W., Smithe K. K. H., Pop E., Sordan R. (2020) Ultra-Scaled MoS2 Transistors and Circuits Fabricated Without Nanolithography. 2D Mater. 7.

8. Manzeli S., Ovchinnikov D., Pasquier D., Yazyev O., Kis A. (2017) 2D Transition Metal Dichalcogenides. Nat. Rev. Mater. 2.

9. Iannaccone G., Bonaccorso F., Colombo L., Fiori G. (2018) Quantum Engineering of Transistors Based on 2D Materials Heterostructures. Nat. Nanotechnol. 13, 183–191.

10. Makovskaya T. I., Danilyuka A. L., Krivosheevaa A. V., Shaposhnikova V. L., Borisenkoa V. E. (2020) Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional Crystal. Russian Microelectronics. 49 (7), 507–515.

11. Zebrev G. I. (2011) Graphene Field Effect Transistors: Diffusion–Drift Theory. Physics and Applications of Graphene­Theory. InTech. 476–498. DOI: 10.5772/14211.

12. Jiménez D. (2012) Drift-Diffusion Model for Single Layer Transition Metal Dichalcogenide Field-Effect Transistors. Applied Physics Letters. 101 (24).

13. Kaushik N., Mackenzie D. M. A., Thakar K., Goyal N., Mukherjee B., Boggild P., et al. (2017) Reversible Hysteresis Inversion in MoS2 Field Effect Transistors. Npj 2D Mater. Appl. 1.

14. Lin Y.-C., Dumcenco D. O., Huang Y. S., Suenaga K. (2014) Atomic Mechanism Of The Semiconducting-toMetallic Phase Transition in Single-Layered MoS2. Nat. Nanotechnol. 9, 391–396.

15. Late D. J., Bin Liu, Matte H. S. S. R., Dravid V. P., Rao C. N. R. (2012) Hysteresis in Single-Layer MoS2 Field Effect Transistors. ACS Nano. 6, 5635–5641.

16. Jiapei Shu, Gongtao Wu, Yao Guo, Bo Liu, Xianlong Wei, Qing Chen (2016) The Intrinsic Origin of Hysteresis in MoS2 Field Effect Transistors. Nanoscale. 8, 3049–3056.