Deposition of SiNx Films with Controlled Residual Stress from SiH4-NH3-He Gaseous Mixture in Inductively Coupled Plasma
https://doi.org/10.35596/1729-7648-2024-22-1-5-12
Abstract
We have studied residual mechanical stresses of SiNx films deposited on silicon substrates from a SiH4-NH3-He gaseous mixture in an inductively coupled plasma reactor at a deposition temperature of 150 °C. By varying the flow rate ratio of the reacting gases, the power of the plasma source and the pressure in the reaction chamber, it is possible to obtain SiNx films with tensile or compressive residual stresses. The stress drift was estimated within four weeks after film deposition. It has been shown that for nitride films with residual stresses initially close to zero, an increase in the level of compressive stresses to (–300) MPa is observed during storage.
Keywords
Supporting agencies: This work was supported by the State Scientific Research Program “Photonics and Electronics for Innovations” (project 3.8.1, SR No 20212595).
About the Authors
N. S. Koval’chuk
JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”
Belarus
Belarus
Cand. of Sci., Associate Professor, Deputy Director – Chief Engineer
Minsk
S. A. Demidovich
JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”
Belarus
Belarus
Leading Engineer at the Branch Laboratory of New Technologies and Materials
Minsk
L. A. Vlasukova
Belarusian State University
Belarus
Belarus
Vlasukova Liudmila Aleksandrovna, Cand. of Sci., Head of the Scientific Laboratory of Materials and Device Structure for Micro- and Nanoelectronics at the Faculty of Radiophysics and Computer Sciences
220045, Minsk, Kurchatova St., 5
Tel.: +375 17 209-59-29
I. N. Parkhomenko
Belarusian State University
Belarus
Belarus
Cand. of Sci., Leading Researcher at Scientific Laboratory of Materials and Device Structures for Micro- and Nanoelectronics at the Faculty of Radiophysics and Computer Sciences
Minsk
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Review
For citations:
Koval’chuk N.S., Demidovich S.A., Vlasukova L.A., Parkhomenko I.N. Deposition of SiNx Films with Controlled Residual Stress from SiH4-NH3-He Gaseous Mixture in Inductively Coupled Plasma. Doklady BGUIR. 2024;22(1):5-12. (In Russ.) https://doi.org/10.35596/1729-7648-2024-22-1-5-12
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