DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMS
Abstract
The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate multi-layer which was fabricated using the sol-gel method after heat treatment at the temperature 750 or 800 °C. The lower and upper electrodes were made from platinum and nickel accordingly. The average values of the dielectric permittivity, ε, and the loss factor, tg δ, were found between 150-190 and 0,06-0,1 respectively. The standard deviation values of the mentioned characteristics were calculated.
About the Authors
A. H. Sohrabi
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
N. V. Gaponenko
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
M. V. Rudenko
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
S. M. Zavadski
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
D. A. Golosov
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
A. F. Guk
Белорусский государственный университет информатики и радиоэлектроники
Belarus
Belarus
V. V. Kolos
ОАО «Интеграл»
Belarus
Belarus
A. N. Pyatlitski
ОАО «Интеграл»
Belarus
Belarus
A. S. Turtsevich
ОАО «Интеграл»
Belarus
Belarus
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Review
For citations:
Sohrabi A.H., Gaponenko N.V., Rudenko M.V., Zavadski S.M., Golosov D.A., Guk A.F., Kolos V.V., Pyatlitski A.N., Turtsevich A.S. DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMS. Doklady BGUIR. 2014;(7):28-31. (In Russ.)
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