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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">bsuir-371</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>ДИЭЛЕКТРИЧЕСКИЕ ХАРАКТЕРИСТИКИ КОНДЕНСАТОРНЫХ СТРУКТУР НА ОСНОВЕ ПЛЕНОК ТИТАНАТА СТРОНЦИЯ, СФОРМИРОВАННЫХ ЗОЛЬ-ГЕЛЬ МЕТОДОМ</article-title><trans-title-group xml:lang="en"><trans-title>DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMS</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Сохраби</surname><given-names>А. Х.</given-names></name><name name-style="western" xml:lang="en"><surname>Sohrabi</surname><given-names>A. H.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гапоненко</surname><given-names>Н. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Gaponenko</surname><given-names>N. V.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Руденко</surname><given-names>М. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Rudenko</surname><given-names>M. V.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Завадский</surname><given-names>С. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Zavadski</surname><given-names>S. M.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Голосов</surname><given-names>Д. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Golosov</surname><given-names>D. A.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гук</surname><given-names>А. Ф.</given-names></name><name name-style="western" xml:lang="en"><surname>Guk</surname><given-names>A. F.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Колос</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Kolos</surname><given-names>V. V.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Петлицкий</surname><given-names>А. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Pyatlitski</surname><given-names>A. N.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Турцевич</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Turtsevich</surname><given-names>A. S.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff xml:lang="ru" id="aff-1"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution><country>Belarus</country></aff><aff xml:lang="ru" id="aff-2"><institution>ОАО «Интеграл»</institution><country>Belarus</country></aff><pub-date pub-type="collection"><year>2014</year></pub-date><pub-date pub-type="epub"><day>03</day><month>06</month><year>2019</year></pub-date><volume>0</volume><issue>7</issue><fpage>28</fpage><lpage>31</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Сохраби А.Х., Гапоненко Н.В., Руденко М.В., Завадский С.М., Голосов Д.А., Гук А.Ф., Колос В.В., Петлицкий А.Н., Турцевич А.С., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Сохраби А.Х., Гапоненко Н.В., Руденко М.В., Завадский С.М., Голосов Д.А., Гук А.Ф., Колос В.В., Петлицкий А.Н., Турцевич А.С.</copyright-holder><copyright-holder xml:lang="en">Sohrabi A.H., Gaponenko N.V., Rudenko M.V., Zavadski S.M., Golosov D.A., Guk A.F., Kolos V.V., Pyatlitski A.N., Turtsevich A.S.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/371">https://doklady.bsuir.by/jour/article/view/371</self-uri><abstract><p>Сформированы тонкопленочные конденсаторы на подложках кремния. Основу конденсатора составляет многослойная пленка титаната стронция, полученная золь-гель методом при температурах отжига 750-800 °С. Нижний электрод сформирован из платины, верхний - из никеля. Средние значения диэлектрической проницаемости и тангенса угла диэлекрических потерь лежат в пределах 150-190 и 0,06-0,1 соответственно. Приведены значения среднеквадратического отклонения указанных величин</p></abstract><trans-abstract xml:lang="en"><p>The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate multi-layer which was fabricated using the sol-gel method after heat treatment at the temperature 750 or 800 °C. The lower and upper electrodes were made from platinum and nickel accordingly. The average values of the dielectric permittivity, ε, and the loss factor, tg δ, were found between 150-190 and 0,06-0,1 respectively. The standard deviation values of the mentioned characteristics were calculated.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>золь-гель</kwd><kwd>титанат стронция</kwd><kwd>конденсатор</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Fuentes S., Zarate R.A., Chavez E. et. al. // J. Mater. Sci. 2010. Vol. 45. P. 1448-1452.</mixed-citation><mixed-citation xml:lang="en">Fuentes S., Zarate R.A., Chavez E. et. al. // J. Mater. Sci. 2010. Vol. 45. P. 1448-1452.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Hofman W., Hoffmann S., Waster R. // Thin Solid Films. 1997. Vol. 305 P. 66-73.</mixed-citation><mixed-citation xml:lang="en">Hofman W., Hoffmann S., Waster R. // Thin Solid Films. 1997. Vol. 305 P. 66-73.</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Pontes F.M., Lee E.J.H., Leite E.R. et. al. // J. Mater. Sci. 2000.Vol. 35. P. 4783-4787.</mixed-citation><mixed-citation xml:lang="en">Pontes F.M., Lee E.J.H., Leite E.R. et. al. // J. Mater. Sci. 2000.Vol. 35. P. 4783-4787.</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Sohrabi Anaraki H., Gaponenko N.V., Rudenko M.V. et. al. // Докл. БГУИР. 2013. № 8 (78). С. 10-15.</mixed-citation><mixed-citation xml:lang="en">Sohrabi Anaraki H., Gaponenko N.V., Rudenko M.V. et. al. // Докл. БГУИР. 2013. № 8 (78). С. 10-15.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Gaponenko N.V., Kortov V.S., Rudenko M.V. et. al. // J. of Applied Physics. 2012. Vol. 111. P. 103101-103107.</mixed-citation><mixed-citation xml:lang="en">Gaponenko N.V., Kortov V.S., Rudenko M.V. et. al. // J. of Applied Physics. 2012. Vol. 111. P. 103101-103107.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
