Temperature Dependence of 3С-SiC Growth During Rapid Vacuum Thermal Silicon Treatment
https://doi.org/10.35596/1729-7648-2023-21-4-12-18
Abstract
The paper presents the results of a study of the structure, phase composition, and growth kinetics of silicon carbide epitaxial layers on silicon substrates during their rapid vacuum thermal treatment. Transmission electron microscopy revealed the formation of layers of the cubic polytype SiC (3C-SiC) on silicon during carbidization in the temperature range of 1000–1300 °C. It was found that the formation of SiC layers proceeds in two stages, characterized by different activation energies. In the lower temperature range from 1000 to 1150 °C, the activation energy of the SiC growth process is Ea = 0.67 eV, while in the temperature range from 1150 to 1300 °C, the activation energy increases by almost an order of magnitude (Ea = 6.3 eV), which indicates a change in the limiting physical process. It has been established that the type of conductivity and the orientation of the substrate affect the thickness of the formed SiC layers. In this case, the greatest thickness of silicon carbide layers is achieved on silicon substrates with (111) orientation of p-type conductivity.
Keywords
epitaxial SiC/Si structures,
activation energy,
vacuum carbidization,
rapid thermal processing,
thin films
Supporting agencies: The research was conducted in the framework of the T22-030 project of the Belarusian Republican Foundation for Fundamental Research, as well as, in part, the project of the state research program “Photonics and Electronics for Innovations” (project 3.1.2, No GR 20212702). The authors express their gratitude to M. Mokhovikov for his help in carrying out measurements by the method of transmission electron microscopy
About the Authors
M. V. Labanok
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Labanok Mikhail Vladimirovich - Senior Lecturer at the Physical Electronics and Nanotechnologies Department.
220064, Minsk, Kurchatova St., 5. Tel.: +375 29 654-09-53
P. I. Gaiduk
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Labanok Mikhail Vladimirovich - Dr. of Sci. (Phys. and Math.), Professor at the Physical Electronics and Nanotechnologies Department.
220064, Minsk, Kurchatova St., 5
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Review
For citations:
Labanok M.V., Gaiduk P.I. Temperature Dependence of 3С-SiC Growth During Rapid Vacuum Thermal Silicon Treatment. Doklady BGUIR. 2023;21(4):12-18. (In Russ.) https://doi.org/10.35596/1729-7648-2023-21-4-12-18
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