bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2023-21-4-12-18bsuir-3675Research ArticleЭЛЕКТРОНИКА, РАДИОФИЗИКА, РАДИОТЕХНИКА, ИНФОРМАТИКАELECTRONICS, RADIOPHYSICS, RADIOENGINEERING, INFORMATICSТемпературная зависимость роста 3C-SiC при быстрой вакуумно-термической обработке кремнияTemperature Dependence of 3С-SiC Growth During Rapid Vacuum Thermal Silicon TreatmentЛобанокМ. В.LabanokM. V.

Лобанок Михаил Владимирович - старший преподаватель кафедры физической электроники и нанотехнологий.

220064, Минск, ул. Курчатова, 5. Тел.: +375 29 654-09-53

Labanok Mikhail Vladimirovich - Senior Lecturer at the Physical Electronics and Nanotechnologies Department.

220064, Minsk, Kurchatova St., 5. Tel.: +375 29 654-09-53

mishalobanok@gmail.comГайдукП. И.GaidukP. I.

Доктор физико-математических наук, профессор кафедры физической электроники и нанотехнологий.

220064, Минск, ул. Курчатова, 5

Labanok Mikhail Vladimirovich - Dr. of Sci. (Phys. and Math.), Professor at the Physical Electronics and Nanotechnologies Department.

220064, Minsk, Kurchatova St., 5

Белорусский государственный университет информатики и радиоэлектроникиBelarusian State University of Informatics and Radioelectronics2023280820232141218Copyright © Лобанок М.В., Гайдук П.И., 20232023Лобанок М.В., Гайдук П.И.Labanok M.V., Gaiduk P.I.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/3675

Представлены результаты исследования структуры, фазового состава и кинетики роста эпитаксиальных слоев карбида кремния на кремниевых подложках при их быстрой вакуумно-термической обработке. Методами просвечивающей электронной микроскопии установлено формирование слоев кубического политипа SiC (3C-SiC) на кремнии при карбидизации в диапазоне температур 1000–1300 °С. Обнаружено, что формирование слоев SiC проходит в два этапа, характеризующихся различными энергиями активации. В более низкотемпературном диапазоне (1000–1150 °С) энергия активации процесса роста SiC составляет Ea = 0,67 эВ, тогда как в диапазоне 1150–1300 °С она увеличивается практически на порядок (Ea = 6,3 эВ), что указывает на смену лимитирующего физического процесса. Установлено, что тип проводимости и ориентация подложки оказывают влияние на толщину формированных слоев SiC. При этом наибольшая толщина слоев карбида кремния достигается на кремниевых подложках с ориентацией (111) p-типа проводимости.

The paper presents the results of a study of the structure, phase composition, and growth kinetics of silicon carbide epitaxial layers on silicon substrates during their rapid vacuum thermal treatment. Transmission electron microscopy revealed the formation of layers of the cubic polytype SiC (3C-SiC) on silicon during carbidization in the temperature range of 1000–1300 °C. It was found that the formation of SiC layers proceeds in two stages, characterized by different activation energies. In the lower temperature range from 1000 to 1150 °C, the activation energy of the SiC growth process is Ea = 0.67 eV, while in the temperature range from 1150 to 1300 °C, the activation energy increases by almost an order of magnitude (Ea = 6.3 eV), which indicates a change in the limiting physical process. It has been established that the type of conductivity and the orientation of the substrate affect the thickness of the formed SiC layers. In this case, the greatest thickness of silicon carbide layers is achieved on silicon substrates with (111) orientation of p-type conductivity.

эпитаксиальные структуры SiC/Siэнергия активациивакуумная карбидизациябыстрая термическая обработкатонкие пленкиepitaxial SiC/Si structuresactivation energyvacuum carbidizationrapid thermal processingthin filmsИсследования выполнены в рамках проекта Т22-030 Белорусского республиканского фонда фундаментальных исследований, а также частично проекта Государственной программы научных исследований «Фотоника и электроника для инноваций» (проект 3.1.2, № ГР 20212702). Авторы выражают благодарность М. А. Моховикову за помощь при проведении измерений методом просвечивающей электронной микроскопииThe research was conducted in the framework of the T22-030 project of the Belarusian Republican Foundation for Fundamental Research, as well as, in part, the project of the state research program “Photonics and Electronics for Innovations” (project 3.1.2, No GR 20212702). The authors express their gratitude to M. 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The authors declare that there are no conflicts of interest present.