Multilayer Metallization Systems of Submicron Integrated Circuits
https://doi.org/10.35596/1729-7648-2022-20-7-36-42
Abstract
The creation of a multilevel system of interconnections in submicron integrated circuits makes it possible to reduce the electrical resistance of conductive tracks, parasitic capacitance between conductors, and increase the speed of microelectronic devices. It is proposed to form a transverse profile of the current-carrying tracks of a multilayer metallization system in the form of an isosceles trapezoid with angles at the lower base equal to 75–85 degrees. Etching of an aluminum-based alloy film is carried out in a plasma gas mixture of BCl3, Cl2, and N2 at the pressure of 150–250 mTorr and power density of 1.6–2.2 W/cm2, with the following component content, vol.%: BCl3 – 50–65; Cl2 – 25–35; N2 – the rest.
About the Author
V. V. Emelyanov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Emelyanov Viкtor Viktorovich., Postgraduate at the Department of Electronic Engineering and Technology
220013, Republic of Belarus, Minsk, P. Brovka St., 6
Tel. + 375 29 688-75-76
References
1. Dostanko A. P. et al. (2020) Innovative Technologies and Equipment of Submicron Electronics. Minsk: Belarusian Science Publ. 260 (in Russian).
2. Emelyanov V. V. (2020) Increasing the Resistance to Stress Migration of Film Structures Based on Aluminum in Microelectronics. Electronics: Science, Technology, Business. (1), 152–159 (in Russian).
3. Emelyanov V. V., Emelyanov V. A., Baranov V. V. (2020) Multilayer Conductive Films Based on Aluminum for Semiconductor Devices and Integrated Circuits. Vestsi Natsiyanal’nai Akademii Navuk Belarusi. Ser. Phis.-Techn. Navuk. 65 (2), 170–176 (in Russian).
4. Turtsevich A. S., Emelyanov V. V. (2007) Formation of Functional Layers of Integrated Circuits from the Gas Phase. Minsk, Integralpolygraph Publ. 224 (in Russian).
5. Grigoriev F. I. (2003) Plasma-Chemical and Ion-Chemical Etching in Microelectronic Technology. Moskov, MGIEiM Publ. 48 (in Russian).
Review
For citations:
Emelyanov V.V. Multilayer Metallization Systems of Submicron Integrated Circuits. Doklady BGUIR. 2022;20(7):36-42. (In Russ.) https://doi.org/10.35596/1729-7648-2022-20-7-36-42
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