Effect of Rapid Thermal Annealing Temperature on the Electrophysical Properties of the Ohmic Contact of Ti/Al/Ni Metallization to the GaN/AlGaN Heterostructure | Yunik | Doklady BGUIR

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ISSN 2708-0382 (Online)

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Yunik A.D., Solovjov J.A., Zhyhulin D.V. Effect of Rapid Thermal Annealing Temperature on the Electrophysical Properties of the Ohmic Contact of Ti/Al/Ni Metallization to the GaN/AlGaN Heterostructure. Doklady BGUIR. 2022;20(3):13-19. (In Russ.) https://doi.org/10.35596/1729-7648-2022-20-3-13-19

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ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)

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About the Authors

A. D. Yunik
JSC “INTEGRAL” – “INTEGRAL” Holding Managing Company
Belarus

Yunik Andrei Dmitrievich, Leading Engineer of the Branch Laboratory of New Technologies and Materials

220108, Minsk, Korzhenevskogo St., 16, r. 247
tel. +375-29-854-66-51

J. A. Solovjov
JSC “INTEGRAL” – “INTEGRAL” Holding Managing Company
Belarus

Solovjov Ja.А., Cand. of Sci., Associate Professor, Deputy Director of the “Transistor” Branch

220108, Minsk, Korzhenevskogo St., 16, r. 247

D. V. Zhyhulin
JSC “INTEGRAL” – “INTEGRAL” Holding Managing Company
Belarus

Zhyhulin D.V., Head of the Sector of SC “Belmicroanalysis”

220108, Minsk, Korzhenevskogo St., 16, r. 247

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