Для цитирования:

Volcheck V.S., Stempitsky V.R. Large Signal Performance of the Gallium Nitride Heterostructure Field-Effect Transistor With a Graphene Heat-Removal System. Доклады БГУИР. 2022;20(1):40-47. https://doi.org/10.35596/1729-7648-2022-20-1-40-47

For citation:

Volcheck V.S., Stempitsky V.R. Large Signal Performance of the Gallium Nitride Heterostructure Field-Effect Transistor With a Graphene Heat-Removal System. Doklady BGUIR. 2022;20(1):40-47. https://doi.org/10.35596/1729-7648-2022-20-1-40-47