The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs.
https://doi.org/10.35596/1729-7648-2021-19-8-81-86
Аннотация
The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.
Ключевые слова
Об авторах
I. Yu. Lovshenko
Belarusian State University of Informatics and Radioelectronics
Беларусь
Беларусь
A. Yu. Voronov
Belarusian State University of Informatics and Radioelectronics
Беларусь
Беларусь
P. S. Roshchenko
Belarusian State University of Informatics and Radioelectronics
Беларусь
Беларусь
R. E. Ternov
Belarusian State University of Informatics and Radioelectronics
Беларусь
Беларусь
Ya. D. Galkin
Research Institute for Nuclear Problems of Belarusian State University
Беларусь
Беларусь
A. V. Kunts
Research Institute for Nuclear Problems of Belarusian State University
Беларусь
Беларусь
V. R. Stempitsky
Belarusian State University of Informatics and Radioelectronics
Беларусь
Беларусь
Jinshun Bi
Institute of Microelectronics of Chinese Academy of Sciences
Китай
Китай
Список литературы
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Рецензия
Для цитирования:
Lovshenko I.Yu., Voronov A.Yu., Roshchenko P.S., Ternov R.E., Galkin Ya.D., Kunts A.V., Stempitsky V.R., Bi J. The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs. Доклады БГУИР. 2021;19(8):81-86. https://doi.org/10.35596/1729-7648-2021-19-8-81-86
For citation:
Lovshenko I.Yu., Voronov A.Yu., Roshchenko P.S., Ternov R.E., Galkin Ya.D., Kunts A.V., Stempitsky V.R., Bi J. The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs. Doklady BGUIR. 2021;19(8):81-86. https://doi.org/10.35596/1729-7648-2021-19-8-81-86
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