The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
https://doi.org/10.35596/1729-7648-2021-19-8-81-86
Abstract
The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.
Supporting agencies: The research is funded by and carried out within the state program of scientific research “Photonics and electronics for innovations” (task 3.4).
About the Authors
I. Yu. Lovshenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Ivan Yur’evich Lovshenko – Head of R&D Lab. “CAD in Micro- and Nanoelectronicsˮ of R&D Department
220013, Republic of Belarus, Minsk, P. Brovka St., 6, Belarusian State University of Informatics and Radioelectronics
A. Yu. Voronov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Aleksei Yu. Voronov – Master's student
Minsk
P. S. Roshchenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Polina S. Roshchenko – Master's student, Electronic Engineer at R&D Lab. “CAD in Micro- and Nanoelectronicsˮ of R&D Department
Minsk
R. E. Ternov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Roman E. Ternov – Master's student
Minsk
Ya. D. Galkin
Research Institute for Nuclear Problems of Belarusian State University
Belarus
Belarus
Yaroslav D. Galkin – Postgraduate student, Electronics Engineer at Electronic Methods and Experiment Means Laboratory
Minsk
A. V. Kunts
Research Institute for Nuclear Problems of Belarusian State University
Belarus
Belarus
Alexey V. Kunts – Postgraduate Student, Electronics Engineer at Electronic Methods and Experiment Means Laboratory
Minsk
V. R. Stempitsky
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Victor R. Stempitsky – PhD., Associate Professor, Vice-Rector of Research and Development, Head of R&D Department, Scientific Supervisor of R&D Lab. “CAD in Micro- and Nanoelectronicsˮ
Minsk
Jinshun Bi
Institute of Microelectronics of Chinese Academy of Sciences
China
China
Jinshun Bi – Professor
Beijing
References
1. Kulakov V.M., Ladygin E.A., Shahovcov V.I. The effect of penetrating radiation on electronic products. M. : Sov. Radio; 1980. (In Russ.)
2. Allam E.E., Inguimbert C., Meulenberg A., Jorio A., Zorkani I. Gamma non-ionizing energy loss:Comparison with the damage factor in silicon devices. Journal of Applied Physics. 2018;123 (095703):1-5.
3. Silvaco International. Victory Device : User Manual, Santa Clara : Silvaco; 2019.
4. Synopsys Inc. Sentaurus Device : User Guide, Version L-2016.03. San Jose : Synopsys; 2016.
5. Site of the SR-NIEL project [Electronic resource]. – Access mode: http://www.sr-niel.org/index.php.
6. Mansouri E. Studies on Radiation-induced Defects in InP/InAsP Nanowire-based Quantum Disc-in-wire Photodetectors. Halmstad : Halmstad University; 2018.
7. Pons D., Mooney P.M., Bourgoin J.C. Energy Dependence of Deep Level Introduction in Electron Irradiated GaAs. J. Appl. Phys. 1980;51:2038-2042.
8. Allam M.E., Inguimbert C., Nuns T., Meulenberg A., Jorio A., Zorkani I. Gamma and Electron NIEL Dependence of Irradiated GaAs. NSREC. 2016:7.
9. Claeys C., Simoen E. Radiation effects in Advanced Semiconductor Materials and Devices. Berlin: Springer; 2002.
10. Chen N., Gray S., Hernandez-Rivera E., Huang D., LeVan P. D., Gao F.. Computational simulation of threshold displacement energies of GaAs. Journal of Materials Research. 2017; 32(8):1555-1562.
11. Ziegler J.F., Biersack J. P., Littmark U. The Stopping and Range of Ions in Solids. Pergamon; 1985.
Review
For citations:
Lovshenko I.Yu., Voronov A.Yu., Roshchenko P.S., Ternov R.E., Galkin Ya.D., Kunts A.V., Stempitsky V.R., Bi J. The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs. Doklady BGUIR. 2021;19(8):81-86. https://doi.org/10.35596/1729-7648-2021-19-8-81-86
Views: 4478
Email this article 