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The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs.

https://doi.org/10.35596/1729-7648-2021-19-8-81-86

Полный текст:

Аннотация

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

Об авторах

I. Yu. Lovshenko
Belarusian State University of Informatics and Radioelectronics
Беларусь


A. Yu. Voronov
Belarusian State University of Informatics and Radioelectronics
Беларусь


P. S. Roshchenko
Belarusian State University of Informatics and Radioelectronics
Беларусь


R. E. Ternov
Belarusian State University of Informatics and Radioelectronics
Беларусь


Ya. D. Galkin
Research Institute for Nuclear Problems of Belarusian State University
Беларусь


A. V. Kunts
Research Institute for Nuclear Problems of Belarusian State University
Беларусь


V. R. Stempitsky
Belarusian State University of Informatics and Radioelectronics
Беларусь


Jinshun Bi
Institute of Microelectronics of Chinese Academy of Sciences
Китай


Список литературы

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Рецензия

Для цитирования:


Lovshenko I.Y., Voronov A.Y., Roshchenko P.S., Ternov R.E., Galkin Y.D., Kunts A.V., Stempitsky V.R., Bi J. The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs. Доклады БГУИР. 2021;19(8):81-86. https://doi.org/10.35596/1729-7648-2021-19-8-81-86

For citation:


Lovshenko I.Yu., Voronov A.Yu., Roshchenko P.S., Ternov R.E., Galkin Y.D., Kunts A.V., Stempitsky V.R., Bi J. The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs. Doklady BGUIR. 2021;19(8):81-86. https://doi.org/10.35596/1729-7648-2021-19-8-81-86

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ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)