Preview

Доклады БГУИР

Расширенный поиск

Influence of radiation exposure on the properties of dielectric layers based on anodic aluminum oxide

https://doi.org/10.35596/1729-7648-2021-19-8-68-71

Полный текст:

Аннотация

Devices that are used in the aerospace industry must operate in extreme conditions, so it is important to understand how the properties of materials change under the influence of radiation and low temperatures. Anodic aluminum oxide, due to its mechanical and dielectric properties, is widely used in electronic devices with a high degree of integration. Radiation exposure can lead to degradation of the electrophysical parameters of dielectric films and can also change their chemical composition. The methods for studying the effect of radiation exposure on the dielectric properties of films are shown in this article. The research has been carried out and the results of the influence of α-particles on the dielectric properties of a porous film of anodic aluminum oxide during the influence of low temperature are presented.

Ключевые слова


Об авторах

S. A. Biran
Belarusian State University of Informatics and Radioelectronics
Беларусь


D. A. Korotkevich
Belarusian State University of Informatics and Radioelectronics
Беларусь


A. V. Korotkevich
Belarusian State University of Informatics and Radioelectronics
Беларусь


K. V. Garifov
Belarusian State University of Informatics and Radioelectronics
Беларусь


A. D. Dashkevich
Belarusian State University of Informatics and Radioelectronics
Беларусь


Список литературы

1. Lee W., Park S.-J. Porous Anodic Aluminum Oxide: Anodization and Templated Synthesis of Functional Nanostructures. Chem. Rev. 2014;(114):7487-7556. DOI: 10.1021/cr500002z.

2. Sidorov N., Knyazeva V. Radiation resistance of materials of radio engineering structures. Moskow: Soviet Radio; 1976.

3. Felix J., Schwank J., Fleetwood D. Effects of radiation and charge trapping on the reliability of high-k gate dielectrics. Microelectronics Reliability. 2004;44:563-575.

4. Harari E., Royce B.S.H. Trap structure of pyrolytic Al2O3 in MOS capacitors. Appl. Phys. Lett. 1973;22:106-107

5. Li M., Xie DG., Ma E. Effect of hydrogen on the integrity of aluminium–oxide interface at elevated temperatures. Nat Commun. 2017;8:14564. DOI:10.1038/ncomms14564.

6. Vavilov V., Gorin B., Danilin N. Radiation methods in solid-state electronics. Radio and communication. 1990.


Рецензия

Для цитирования:


Biran S.A., Korotkevich D.A., Korotkevich A.V., Garifov K.V., Dashkevich A.D. Influence of radiation exposure on the properties of dielectric layers based on anodic aluminum oxide. Доклады БГУИР. 2021;19(8):68-71. https://doi.org/10.35596/1729-7648-2021-19-8-68-71

For citation:


Biran S.A., Korotkevich D.A., Korotkevich A.V., Garifov K.V., Dashkevich A.D. Influence of radiation exposure on the properties of dielectric layers based on anodic aluminum oxide. Doklady BGUIR. 2021;19(8):68-71. https://doi.org/10.35596/1729-7648-2021-19-8-68-71

Просмотров: 34


Creative Commons License
Контент доступен под лицензией Creative Commons Attribution 4.0 License.


ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)