bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2021-19-8-68-71bsuir-3248Research ArticleЭЛЕКТРОНИКА, РАДИОФИЗИКА, РАДИОТЕХНИКА, ИНФОРМАТИКАELECTRONICS, RADIOPHYSICS, RADIOENGINEERING, INFORMATICSInfluence of radiation exposure on the properties of dielectric layers based on anodic aluminum oxideInfluence of radiation exposure on the properties of dielectric layers based on anodic aluminum oxideBiranS. A.BiranS. A.

Sergey А. Biran – Deputy Dean of the Faculty of Radioengineering and Electronics 

220013, Republic of Belarus, Minsk, P. Brovka St., 6, Belarusian State University of Informatics and Radioelectronics

biran@bsuir.byKorotkevichD. A.KorotkevichD. A.

Dmitriy А. Korotkevich – Assistant at the Department of Electronics  

Minsk

KorotkevichA. V.KorotkevichA. V.

Alexander V. Korotkevich – PhD., Associate Professor, Dean of the Faculty

Minsk

GarifovK. V.GarifovK. V.

Kirill V. Garifov –  Undergraduate at           the Department of Micro- and Nanoelectronics

Minsk

DashkevichA. D.DashkevichA. D.

Anton D. Dashkevich – Undergraduate at  the Department of Micro- and Nanoelectronics

Minsk

Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and Radioelectronics2021030120221986871Copyright © Biran S.A., Korotkevich D.A., Korotkevich A.V., Garifov K.V., Dashkevich A.D., 20222022Biran S.A., Korotkevich D.A., Korotkevich A.V., Garifov K.V., Dashkevich A.D.Biran S.A., Korotkevich D.A., Korotkevich A.V., Garifov K.V., Dashkevich A.D.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/3248

Devices that are used in the aerospace industry must operate in extreme conditions, so it is important to understand how the properties of materials change under the influence of radiation and low temperatures. Anodic aluminum oxide, due to its mechanical and dielectric properties, is widely used in electronic devices with a high degree of integration. Radiation exposure can lead to degradation of the electrophysical parameters of dielectric films and can also change their chemical composition. The methods for studying the effect of radiation exposure on the dielectric properties of films are shown in this article. The research has been carried out and the results of the influence of α-particles on the dielectric properties of a porous film of anodic aluminum oxide during the influence of low temperature are presented.

Devices that are used in the aerospace industry must operate in extreme conditions, so it is important to understand how the properties of materials change under the influence of radiation and low temperatures. Anodic aluminum oxide, due to its mechanical and dielectric properties, is widely used in electronic devices with a high degree of integration. Radiation exposure can lead to degradation of the electrophysical parameters of dielectric films and can also change their chemical composition. The methods for studying the effect of radiation exposure on the dielectric properties of films are shown in this article. The research has been carried out and the results of the influence of α-particles on the dielectric properties of a porous film of anodic aluminum oxide during the influence of low temperature are presented.

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The authors declare that there are no conflicts of interest present.