Experimental studies and a double gate JFET model for analog integrated circuits

One of directions of improving parameters of analog integrated circuits is a development of new and modernization of existing designs of integrated elements without significantly changing of a technological route of integrated circuit manufacturing with a simultaneous creation of new integrated elements models. The article considers the results of experimental studies of the double gate junction field-effect transistor manufactured according to the 3CBiT technological route of JSC Integral. Based on the obtained results, the electrical model of double gate junction field-effect transistor is proposed, which describes the features of its application in analog integrated circuits. Comparison of I-V characteristics of measurements results and created model simulation are presented. A small capacity and a reverse current of a double gate junction field-effect transistor top gate, an ability to compensate for the DC (direct current) component of an input current provide a significant improvement in the characteristics of analog integrated circuits such as electrometric operational amplifiers and charge-sensitive amplifiers. The developed double gate junction field-effect transistor can be used in signal readout devices required in the analog interfaces of space instrument sensors and nuclear electronics.

1. Close J.P., Counts L.W. A 50-fA junction-isolated operational amplifier. IEEE Journal of Solid – State Circuits. 1988; 23(3):843-851. DOI: 10.1109/4.328.

2. Nanver L.K. and Goudena E.J.G. Design considerations for integrated high-frequency p-channel JFETs. IEEE Transactions on Electron Devices. 1988;35(11):1924-1934. DOI: 10.1109/16.7406.

3. Fazzi A., Rehak P. «Gate-to-gate» BJT obtained from the double-gate input JFET to reset charge preamplifiers. Nuclear Instruments and Methods in Physics Research. 1996; A377:453-458. DOI: https://doi.org/10.1016/0168-9002(96)00238-0.

4. Fazzi A., Rehak P. A double-gate double-feedback JFET charge-sensitive preamplifier. Nuclear Instruments and Methods in Physics Research. 1996;A380(1-2):346-349. DOI: https://doi.org/10.1016/S0168-9002(96)00355-5.

5. Baturitsky M.A., Dvornikov O.V. The double-gate p-JFET-inputted amplifier for low-capacitance detectors. Nuclear Instruments and Methods in Physics Research. 1998;419(1):99-104. DOI: https://doi.org/10.1016/S0168-9002(98)00900-0.

6. Makris N., Bucher M., Jazaeri F., Sallese J. A Compact Model for Static and Dynamic Operation of Symmetric Double-Gate Junction FETs. 2018 48th European Solid-State Device Research Conference (ESSDERC). 2018;238-241. DOI: 10.1109/essderc.2018.8486848.

7. Petrosyants K.O., Ismail-Zade M.R., Sambursky L. Compact Si JFET model for cryogenic temperature. Cryogenics. 2020; 108:1-6. DOI: https://doi.org/10.1016/j.cryogenics.2020.103069.

8. Prokopenko N.N., Dvornikov O.V., Bugakova A.V. [Low temperature and radiation hardned analog integrated circuit design for sensors signal processing]. Moskow: SOLON-PRESS; 2021.

9. Abramov I.I. Dvornikov O.V. [Analog integrated circuit design for precision measurement systems]. Minsk: Akademiya upravleniya pri Prezidente Respubliki Belarus'; 2006. (In Russ.).

10. Dostal I. [Operational amplifiers]. Moskow: Mir; 1982. (In Russ.).