For citations:
Kovalchuk N.S., Omelchenko A.A., Pilipenko V.A., Solodukha V.A., Shestovski D.V. Formation of a gate dielectric of nanometer thickness by rapid thermal treatment. Doklady BGUIR. 2021;19(4):103-112. (In Russ.) https://doi.org/10.35596/1729-7648-2021-19-4-103-112
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