Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide
Abstract
Assessment is performed of the permissible nonuniformity of irradiation and temperature scatter as per the wafer area during the rapid thermal treatment, not causing the thermal stresses in it, resultant in the plastic melting or silicon disruption. It was shown, that formation of platinum silicide at Т≤ 810 °С does not cause the negative phenomena in silicon, and it should be performed in the nitrogen environment, whose flooding into the the sealed chamber is done after creation in it of vacuum of 10 –2 mm, mercury column.
About the Authors
V. A. Solodukha
JSC «INTEGRAL» – holding managing company «INTEGRAL»
Belarus
PhD, general manager
Belarus
PhD, general manager
V. A. Pilipenko
JSC «INTEGRAL» – holding managing company «INTEGRAL»
Belarus
Belarus
Pilipenka Uladzimir Aleksandrovich - D.Sci, professor, corresponding member of the National academy of sciences of Belarus, deputy director of science development of state center «Belmicroanalysis»
220108, Republic of Belarus, Minsk, Kazintsa st., 121A
tel. +375-17-212-37-41
V. A. Gorushko
JSC «INTEGRAL» – holding managing company «INTEGRAL»
Belarus
Belarus
leading engineer of state center «Belmicroanalysis»
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Review
For citations:
Solodukha V.A., Pilipenko V.A., Gorushko V.A. Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide. Doklady BGUIR. 2018;(8):88-92. (In Russ.)
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