For citations:
Solodukha V.A., Pilipenko U.A., Gorushko V.A. Influence of rapid thermal treatment of the gate dielectric on the parameters of power field МОSFЕТ transistors. Doklady BGUIR. 2018;(5):99-103. (In Russ.)
Solodukha V.A., Pilipenko U.A., Gorushko V.A. Influence of rapid thermal treatment of the gate dielectric on the parameters of power field МОSFЕТ transistors. Doklady BGUIR. 2018;(5):99-103. (In Russ.)