Temperature characteristics of silicon photoelectronic multipliers
Abstract
The investigations results of the temperature dependences of the multiplication coefficients of the dark current and photocurrent for silicon photoelectric multipliers are presented. It is shown to what extent the decrease in temperature effects to the change in the photocurrent gain and leads to a decrease of the series resistance of the microplasma breakdown. Keywords: silicon photoelectric multipliers, photocurrent gain, microplasma breakdown.
About the Authors
M. A. Asayonak
Belarusian state academy of communications
Belarus
Belarus
O. Yu. Gorbadey
Belarusian state academy of communications
Belarus
Belarus
A. O. Zenevich
Belarusian state academy of communications
Belarus
Belarus
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Review
For citations:
Asayonak M.A., Gorbadey O.Yu., Zenevich A.O. Temperature characteristics of silicon photoelectronic multipliers. Doklady BGUIR. 2018;(2):54-58. (In Russ.)
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