Photocurrent in the structures of silicon / strontium titanate / nickel
Abstract
The SrTiO3 (strontium titanate xerogel) films were fabricated on the substrates of monocrystalline silicon using the sol-gel method at the annealing temperature 750 °С. The upper nickel electrodes were fabricated using the magnetron sputtering, and the volt-amperic characteristics of the obtained structures were measured. Photocurrent was observed from the structure silicon/strontium titanate/nickel under illumination with the halogen lamp, as well as switching from low resistance state to high resistance state under and without illumination.
About the Authors
P. A. Kholov
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
N. V. Gaponenko
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
D. A. Golosov
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
S. M. Zavadski
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
V. A. Ivanov
SPС NAS of Belarus of materials
Belarus
Belarus
V. V. Kolos
«INTEGRAL» - holding managing company «INTEGRAL»
Belarus
Belarus
B. S. Kolosnitsin
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
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Review
For citations:
Kholov P.A., Gaponenko N.V., Golosov D.A., Zavadski S.M., Ivanov V.A., Kolos V.V., Kolosnitsin B.S. Photocurrent in the structures of silicon / strontium titanate / nickel. Doklady BGUIR. 2018;(1):19-24. (In Russ.)
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