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Gravimetric methods for determining porosity of anodically treated silicon: features of realization and accuracy estimation

Abstract

The results of the storage time and temperature processing influence on the porosity of porous silicon are presented. Porosity of the porous silicon samples was calculated by two gravimetric methods: a semi-destructive and destructive. A qualitative and quantitative comparison of two gravimetric methods is presented.

About the Authors

S. A. Zavatski
Belarussian state university of informatics and radioelectronics
Belarus


A. V. Bondarenko
Belarussian state university of informatics and radioelectronics
Belarus


References

1. Лабунов В.А., Бондаренко В.П., Борисенко В.Е. Пористый кремний в полупроводниковой электронике // Зарубежная электронная техника. 1978. № 15. С. 3-47.

2. Canham L.T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers // Appl. Phys. Lett. 1990. Vol. 57. P. 1046-1048.

3. Выращивание методом МЛЭ гомоэпитаксиальных слоев кремния на поверхности пористого кремния после низкотемпературной очистки ее в вакууме/ В.Г. Шенгуров [и др.] // Микроэлектроника. 1993. Vol. 22. С. 19-21.


Review

For citations:


Zavatski S.A., Bondarenko A.V. Gravimetric methods for determining porosity of anodically treated silicon: features of realization and accuracy estimation. Doklady BGUIR. 2017;(8):21-25. (In Russ.)

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ISSN 1729-7648 (Print)
ISSN 2708-0382 (Online)