Intensity determination of the scattering rates in the monolayer graphene
Abstract
The results of simulation of the electron scattering rates in a single graphene layer without substrate are presented. High mobility of charge carriers, maximally obtained among all known materials, makes graphene a promising material for the creation of new semiconductor devices with good output characteristics. The prevalence of electron-electron scattering over other types of scattering in the region of moderate field energy in a single graphene layer is established. The investigated dependences of the rates of carrier scattering will enable to obtain the main characteristics of charge carrier transfer in semiconductor structures containing graphene layers by modeling using the Monte Carlo method.
About the Authors
V. V. Murav'ev
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
V. N. Mishchenka
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
References
1. A graphene field-effect device / M.С. Lemme [et al.] // IEEE Electron Dev. Lett. 2007. Vol. 28. P. 282-284.
2. -GHz transistors from wafer-scale epitaxial graphene / Y.-M. Lin [et al.] // Science. 2010. Vol. 327. P. 662.
3. Туннельные полевые транзисторы на основе графена / Д.А. Свинцов [и др.] // Физика и техника полупроводников. 2013. Том 47, вып. 2. С. 244-250.
4. Influence of electron-electron scattering on transport characteristics in monolayer grapheme / X. Li [et al.] // Appl. Phys. Letters. 2010. Vol. 97. P. 082101.
5. Chauhan Jyotsna, Guo Jing. High-field transport and velocity saturation in grapheme // Appl. Phys. Letters. 2009. Vol. 95. P. 023120.
6. High-field transport in two-dimensional graphene / Fang Tian [et al.] // Physical Review. 2011. Vol. B 84. P. 125450.
7. Ghosh Bahniman, Katiyar Saurabb, Salimath Akshaykumar. Role of of electron-electron scattering on spin transport in single layer grapheme // AIP Advances. 2014. Vol. 4. P. 017116.
8. Mosko Martin, Moskova Antonina. Ensemble Monte Carlo simulation of electron-electron scattering: Improvement of conventional methods // Physical Review. 2010. Vol. 44, № 19. P. 10794-10803.
9. Goodnick S.M., Lurgi P. Effect of electron-electron scattering on non equilibrium transport in quantum-well system // Physical Review. 1988. Vol. 37, № 5. P. 2578-2588.
10. Stern Frank, Howard W.E. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit // Physical Review. 1967. Vol. 163, № 3. P. 163816-163835.
11. First-principles analysis of electron-phonon interaction in grapheme / K.M. Borysenko [et al.] // Physical Review. 2010. Vol. B 81. P. 121412(R).
12. Elton J.G. Santos, Efthimios Kaxiras. Electric-Field Dependence of the Effective Dielectric Constant in Graphene // Nano Lett. 2013. Vol. 13, № 3. P. 898-902.
Review
For citations:
Murav'ev V.V., Mishchenka V.N. Intensity determination of the scattering rates in the monolayer graphene. Doklady BGUIR. 2017;(6):42-47. (In Russ.)
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