Decoration of silicon structures by chemical deposition of nanostructured copper films on porous silicon
Abstract
The results of experimental study of formation regularities, structural and optical properties of nanostructured copper films chemically deposited on porous silicon from solutions of copper sulfate and hydrofluoric acid are presented. Application of the developed solution for the copper deposition on porous silicon in the decoration process of silicon structures are demonstrated.
About the Authors
L. Yu. Roshchin
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
A. V. Bondarenko
Belarusian state university of informatics and radioelectronics
Belarus
Belarus
References
1. Whoriskey P.J. Two chemical stains for marking p-n junctions in silicon // J. Appl. Phys. 1958. Vol. 29. P. 867-868.
2. Morinaga H., Suyama M., Ohmi T. Mechanism of metallic particle growth and metal-induced pitting on Si wafer surface in wet chemical processing // J. Electrochem. Soc. 1994. Vol. 141, № 10. P. 2834-2841.
3. Impact of the electrochemical properties of silicon wafer surfaces on copper outplating from HF solutions / I. Teedinck [et al.] // J. Electrochem. Soc. 1996. Vol. 143, № 10. P. 3323-3327.
4. Lee M.K., Wang H.D., Wang J.J. A Cu seed layer for Cu deposition on silicon // Solid-State Electron. 1997. Vol. 41, № 5. P. 695-702.
5. Recommendations for the characterization of porous solids (Technical Report) / J. Rouquerol [et al.] // Pure and Applied Chemistry. 1994. № 66 (8).
6. Surface Science: An Introduction / K. Oura [et al.]. Berlin: Springer, 2003.
Review
For citations:
Roshchin L.Yu., Bondarenko A.V. Decoration of silicon structures by chemical deposition of nanostructured copper films on porous silicon. Doklady BGUIR. 2017;(4):37-42. (In Russ.)
Views: 364
Email this article 